Check Russia import data of g r under HS code 8542326900. Get import data of Russia for HS code 8542326900
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
27/Nov/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT USED IN ELECTRONIC MODULES for gas meters, cash registers | WINBOND | *** | 3 | PC | 0.03 | 17,89 | View Importer |
12/Nov/2017 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 2880 | PC | 7.29 | 79598,27 | View Importer |
27/Nov/2017 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 3840 | PC | 8.2 | 105927,68 | View Importer |
02/Nov/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 1 GB. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 3 | PC | 0.01 | 36,45 | View Importer |
07/Nov/2017 | 8542326900 | MICROCHIP electronic integrated solid - memories such as FLASH EEPROM since volume 8 Gb. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | MICRON | *** | 3 | PC | 0.014 | 45,44 | View Importer |
10/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | *** | 6000 | PC | 7.98 | 5520 | View Importer |
10/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | *** | 4000 | PC | 5.32 | 3680 | View Importer |
21/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 35000 | PC | 46.55 | 32200 | View Importer |
23/Nov/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 2 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 20 | PC | 0.016 | 91,2 | View Importer |
23/Nov/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - a memory (configuration memory) TYPE FLASH EEPROM WITH VOLUME 8 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 1 | PC | 0.002 | 14,35 | View Importer |
24/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 19000 | PC | 25.27 | 17480 | View Importer |
30/Nov/2017 | 8542326900 | Electronic integrated circuits - Asynchronous / Simultaneous flash memory "NAND" "MT29F8G08ABABAWP-IT: B" with a storage capacity of 8 GB, ranges Supply voltage 2.7-3,6V designed for universal use in microelectronics. WORKING RANGE T | MICRON | *** | 663 | PC | 1.61 | 3911,7 | View Importer |
30/Nov/2017 | 8542326900 | Electronic integrated circuits - Asynchronous / Simultaneous flash memory "NAND" "MT29F8G08ABABAWP-IT: B" with a storage capacity of 8 GB, ranges Supply voltage 2.7-3,6V designed for universal use in microelectronics. WORKING RANGE T | MICRON | *** | 337 | PC | 0.819 | 1988,3 | View Importer |
08/Sep/2017 | 8542326900 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK MICRON MT29F16G08AJADAWP-IT: D B / | *** | TAIWAN CHINA | 0,12 | KG | 0.12 | 689,99 | View Importer |
12/Sep/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 2 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S34ML02G | *** | MALAYSIA | 0,78 | KG | 0.78 | 2143,42 | View Importer |
Our market research report and Russia export statistics of g r covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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