Check Russia export data of s o under HS code 3818. Get export data of Russia for HS code 3818
Date | HS Code | Product Description | Trademark | Destination Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Exporter Name |
---|---|---|---|---|---|---|---|---|---|
28/Nov/2017 | 3818001000 | Substrate SIFAS (SILICON FIBER ARRAY SUBSTRATE). Made of silicon wafers, which by means of photolithography betrays shape defined ITS USE AS A consumable parts of the projection optical ELECTRON-OPTICAL MODULE COLUMNS | ABSENT | KINGDOM OF THE NETHERLANDS | *** | *** | 0.2 | 65947,94 | View Exporter |
10/Nov/2017 | 3818009000 | Thermoelectric semiconductor material, produced according to TU 1779-001-11300308-08 used in the production of electronic appliances, for easy and safe transportation to the BOX INVESTED Styrofoam plates and Foam | ABSENT | CHINA | *** | *** | 152.4 | 35490 | View Exporter |
07/Nov/2017 | 3818001000 | Silicon epitaxial structures "silicon-on-silicon" FRAMEWORK SPETS.№310 / 16-DP of 10/03/2016, (SPEC. №№6G1200E02 FROM 16.10.17-192SHT, 6G1200E03 FROM 16.10.17-96SHT, 6G1200E04 FROM 16.10.17-192SHT , 6G650E01 FROM 16.10.17-192SHT, 6G750E01 FROM 16.10.17-96SHT) In 32 | NO, RUSSIA | CHINA | *** | *** | 44 | 32448 | View Exporter |
07/Nov/2017 | 3818001000 | EPITAXIAL SILICON STRUCTURES "SILICON ON SILICON" FRAMEWORK SPETS.№310 / 16-SP ON 03/10/2016, (SPEC. №№ LA2433PB FROM 09.10.17-30SHT, LA2434PB FROM 09.10.17-30SHT) A 4 PLAST.KOR. FOR INTEGRATION IZG.MIKROSKHEM RAZL.STEPENI and discrete elements of mass | NO, RUSSIA | USA | *** | *** | 2.3 | 5400 | View Exporter |
08/Nov/2017 | 3818001000 | EPITAXIAL SILICON STRUCTURES "SILICON ON SILICON" FRAMEWORK SPETS.№310 / 16-SP ON 10/03/2016, (SPEC. №EX2179PA FROM 08.07.2017-98SHT) A 4 PLAST.KOR. FOR INTEGRATION AND IZG.MIKROSKHEM RAZL.STEPENI discrete elements of mass application | NO, RUSSIA | CANADA | *** | *** | 2.4 | 5880 | View Exporter |
09/Nov/2017 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH660P" - 300 square centimeters (40 pcs.), "DDH689N" - 90 square centimeters (10 pcs.) , "DDH660N" - 80 square centimeters (8 | ABSENT | GERMANY | *** | *** | 0.1 | 10113,83 | View Exporter |
14/Nov/2017 | 3818009000 | Compounds are chemically doped for use in electronics: PLATE light-emitting DIODOV, cut-on-chip, TYPE PLATES: "DDH660P" - 300 sq cm (. 40 PCS), Chem. COMPOSITION: GA (20-38%) AS (52%) AL (10-28%). | ABSENT | GERMANY | *** | *** | 0.1 | 5771,04 | View Exporter |
22/Nov/2017 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH660P" - 300 square centimeters (40 pcs.), "DDH725N" - 250 square centimeters (25 pcs.) , "DDH810N" - 250 cm² | ABSENT | GERMANY | *** | *** | 0.1 | 17061,98 | View Exporter |
29/Nov/2017 | 3818009000 | CONNECTIONS CHEMICAL doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH660P" - 300 sq cm (. 40 PCS), Chem. COMPOSITION: GA (20-38%) AS (52%) AL (10-28%). | ABSENT | GERMANY | *** | *** | 0.1 | 5895,87 | View Exporter |
22/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate for the manufacture of items that will be used as an electrode ELECTRON COLUMN Optical lithography machines: SM.DOPOLNENIE | Telecom-STV | USA | *** | *** | 0.11 | 127,01 | View Exporter |
22/Nov/2017 | 3818001000 | Silicon is alloyed in the form of a plate for the manufacture of items that will be used as an electrode ELECTRON COLUMN Optical lithography machines: SM.DOPOLNENIE | SIGERT WAFER | USA | *** | *** | 0.105 | 1612,66 | View Exporter |
14/Nov/2017 | 3818009000 | SUBSTANCE thermoelectric semiconductor - PREPARATIONS ingot cylindrical Predna. FOR MANUFACTURING Thermoelectric modules, AHF. ON Peltier THIS PRODUCT DOES manufactured in accordance with specifications | WITHOUT A TRADEMARK | USA | *** | *** | 59.5 | 23172,73 | View Exporter |
16/Nov/2017 | 3818009000 | Test plate INGAN / GAN With heteroepitaxial structures, are designed to produce a detector for electron microscopy and mass spectrometry. OBTAINED BY vapor phase epitaxy of organometallic compounds. CONSISTS OF: With -PODLOZHKA | WITHOUT A TRADEMARK | THE STATE OF ISRAEL | *** | *** | 0.245 | 7840 | View Exporter |
30/Nov/2017 | 3818009000 | SUBSTANCE IN THE FORM thermoelectric semiconductor cubic element, Predna. FOR MANUFACTURING Thermoelectric modules, AHF. ON Peltier effect is supplied complete with THIS DOCUMENTATION PRODUCTS REALLY MADE UNDER | WITHOUT A TRADEMARK | UNITED KINGDOM | *** | *** | 0.12 | 2591,1 | View Exporter |
03/Nov/2017 | 3818009000 | POLISHED C 2 sides 60/40 (SCR / DIG) PLATE OF ARTIFICIAL gallium phosphide (GAP), (110): | ABSENT | JAPAN | *** | *** | 0.001 | 780 | View Exporter |
Our market research report and Russia export statistics of s o covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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