Russia Import Data of 1 under HS Code 8542323900

Check Russia import data of 1 under HS code 8542323900. Get import data of Russia for HS code 8542323900

8542323900  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
07/Nov/2017 8542323900 CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 16,384 Mbit memory modules: "INNODISK", *** 1 PC 0.02 19,7 View Importer
14/Nov/2017 8542323900 CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 16,384 Mbit memory modules: "INNODISK", *** 1 PC 0.03 64,16 View Importer
14/Nov/2017 8542323900 CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 16,384 Mbit memory modules: "INNODISK", *** 12 PC 0.36 240,24 View Importer
06/Nov/2017 8542323900 Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B2G1646F-BCMA, VOLUME 2Gbps, 96 pin input voltage 1.5V, SIZE 13.3 * 7.5 * 1.1mm, for PROM.SBORKI monitor model LH55PMFPBGC / RU, HAS FUNCTIONS SAMSUNG ELECTRONICS KOREA REPUBLIC OF 26880 PC 51.3 43029,14 View Importer
14/Nov/2017 8542323900 1-Integrated circuits, monolithic - dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, SK HYNIX INC SINGAPORE 8000 PC 12.5 25017,28 View Importer
29/Nov/2017 8542323900 Dynamic random access memory (DRAM) with a storage capacity of 16 GB / NOT YAVL.LOMOM /: HP *** 1 PC 0.06 594,85 View Importer
22/Nov/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, memory capacity of 1 Gbit MICRON *** 20 PC 0.09 89,64 View Importer
01/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), capacitance 4 GB 2 X (256 MB X 8) VOLTAGE OR 1.5 1.35 VDC CERVOZ *** 20 PC 0.96 860,12 View Importer
01/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), capacitance 4 GB 2 X (8 X 256 MB) 1.35 VOLTAGE OR 1.5 VDC CERVOZ *** 3 PC 0.144 165,02 View Importer
01/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 204 1600 GGC-PIN ECC, reservoirs 4 GB (512 MB X 8) ADVANTECH *** 10 PC 0.48 480,06 View Importer
09/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 204 1600 GGC-PIN ECC, reservoirs 4 GB (512 MB X 8), used in industrial computer as RAM VOLTAGE 1.35 ADVANTECH *** 4 PC 0.192 192,04 View Importer
09/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3L SO-DIMM 1600 MHz 204-PIN, reservoirs 8 GB 2 X (8 X 512 MB), used in industrial computer as RAM VOLTAGE 1.35 ADVANTECH *** 20 PC 0.96 1340,22 View Importer
14/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR 1600 MHz DDR3 DIMM 240-PIN, 2GB capacitance (256 MB X 8) VOLTAGE POWER 1.5 VDC, used in industrial computer as CERVOZ *** 20 PC 0.78 520,15 View Importer
14/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), 2 GB Capacity (MB 256 X 8), 1.35 VOLTAGE OR 1.5 VDC, USED INDUSTRIAL CERVOZ *** 3 PC 0.144 90,03 View Importer
22/Nov/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), 2 GB Capacity (MB 256 X 8), 1.35 VOLTAGE OR 1.5 VDC, USED INDUSTRIAL CERVOZ *** 5 PC 0.24 150,04 View Importer

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Our market research report and Russia export statistics of 1 covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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