Check Russia import data of 100 fo under HS code 8541210000. Get import data of Russia for HS code 8541210000
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
21/Nov/2017 | 8541210000 | Bipolar transistors, power dissipation of 200 mW, 5 V, current of 100 mA, semiconductors - silicon is intended for the generation and amplification of electrical oscillations, | DIODES, CHINA | *** | 12 | PC | 0.0001 | 2,4 | View Importer |
08/Nov/2017 | 8541210000 | Transistors - DIGITAL "BCR08PNH6327" With NPN / PNP-junction, power dissipation 0.25 W, the voltage of the collector junction 50B, collector-emitter voltage 50V, current capacity of 100 milliamperes. Predna. For universal use in microelectr | INFINEON | *** | 315000 | PC | 16.695 | 7632,25 | View Importer |
22/Nov/2017 | 8541210000 | Bipolar Transistor: "BCR08PNH6327" With NPN / PNP junction, C Power Dissipation 0.25 W, collector-emitter voltage 50V, the constant current of 100 mA, for use in the various switches, amplifiers and microelectronics. FLOOR TYPE | INFINEON | *** | 312000 | PC | 16.54 | 6997,29 | View Importer |
22/Nov/2017 | 8541210000 | Transistors: - UNIVERSAL "BC846BLT1G" With NPN-junction, power dissipation 0.25 W, collector-emitter voltage 65V, collector current 100MA, for use in the various switches and amplifiers; - BIPOLAR "BC856B, 215" C P | ON SEMICONDUCTORS | *** | 60000 | PC | 2.1 | 317,7 | View Importer |
27/Nov/2017 | 8541210000 | UNIVERSAL Bipolar Transistor "BC847BLT1G" and "BC856BLT1G" With the PNP-junction, 0,225VT power dissipation, voltage POST. CURRENT collector-emitter voltage 45V and 65V, collector current 100MA, for use in the various switches and Y | ON SEMICONDUCTOR | *** | 777000 | PC | 26.795 | 5977,7 | View Importer |
12/Sep/2017 | 8541210000 | Bipolar transistors, power dissipation of 150 MW, voltage 50 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations,: TOSHIBA TOSHIBA, PHILIPPINES RN1107MFV 1000 | *** | MEXICO | 0,6 | KG | 0.6 | 93,66 | View Importer |
14/Sep/2017 | 8541210000 | Bipolar transistors NPN TRANSISTOR (EPITAXIAL). The maximum voltage of 65 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 4.58 X 3.86 X 4.58MM. Used for electrical P-channel MOS transistors. MAXIMUM NAP | *** | UNITED KINGDOM | 0,02 | KG | 0.02 | 8,34 | View Importer |
14/Sep/2017 | 8541210000 | BIPOLAR PNP transistors. The maximum voltage of 65 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 4.58 X 3.86 X 4.58MM. Used for electrical purposes: FAIRCHILD SEMICONDUCTOR CORPORATION FAIRCHILD FAIRCHILD SEMICONDUCTOR 7 | *** | UNITED KINGDOM | 0,03 | KG | 0.03 | 4,4 | View Importer |
05/Sep/2017 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W: transistor TRANSISTOR FOR SEMICONDUCTOR PCB mounting, 0.2W ON SEMICONDUCTOR ON SEMICONDUCTOR DTC124XET1G 100 | *** | CHINA | *** | KG | **** | 5,44 | View Importer |
09/Sep/2017 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU | *** | THAILAND | 0,01 | KG | 0.01 | 0,8 | View Importer |
09/Sep/2017 | 8541210000 | PNP bipolar transistors TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, a collector current of 100 mA, the power dissipation of 0.3 TSR. CASING SOT-23-3. LOCATED ON TAPE PACKED: In | *** | THAILAND | 0,01 | KG | 0.01 | 0,9 | View Importer |
09/Sep/2017 | 8541210000 | MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH | *** | THAILAND | 0,05 | KG | 0.05 | 41,27 | View Importer |
04/Sep/2017 | 8541210000 | Transistors - Semiconductor devices, for voltage up to 1000V, dissipation of less than 1W are used in electronic equipment, TOTAL - 205000SHT. :. KLS ELECTRONIC CO, LTD is not indicated HOTTECH 0 | *** | CHINA | 12,38 | KG | 12.38 | 1508,82 | View Importer |
11/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS LESS dissipation of less than 1W SYSTEMS FOR INDUSTRIAL ELECTRONICS: Bipolar transistors are single, free rate, power dissipation 0,55VT ARTICLE PBSS4350X, 115-1000SHT. : NEXPERIA BV ABSENT 0 | *** | MALAYSIA | 0,11 | KG | 0.11 | 63,43 | View Importer |
04/Sep/2017 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR, voltage 45 V, 0.5 POWER Tues FOR NXP BC807 100 NONE SURFACE PCB | *** | UNITED STATES | 0,04 | KG | 0.04 | 3,97 | View Importer |
Our market research report and Russia export statistics of 100 fo covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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