Russia A C Imports under HS Code 8541290000 from Mexico

Lookup Russia a c imports under HS code 8541290000 from Mexico. Search a c import data under HS code 8541290000 from Mexico.

8541290000   Mexico  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
04/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR dissipation of 60W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IRG4BC2 *** MEXICO 0,42 KG 0.42 100,9 View Importer
13/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR dissipation of 2W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel INFINEON TECHNOLOGIES AG INFINEON IRF7307TR *** MEXICO 1,9 KG 1.9 1659,52 View Importer
13/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR dissipation of 2W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on reel. Packed in plastic bags (MEL placers *** MEXICO 0,08 KG 0.08 60,42 View Importer
13/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR power dissipation 128VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel INFINEON TECHNOLOGIES AG INFINEON SPD15P1 *** MEXICO 0,05 KG 0.05 26,62 View Importer
13/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR dissipation of 110W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IGW15T *** MEXICO 0,06 KG 0.06 19,75 View Importer
12/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR power dissipation 91VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IRFR540 *** MEXICO 12,66 KG 12.66 6498,73 View Importer
12/Sep/2017 8541290000 FET TRANSISTOR SEMICONDUCTOR power dissipation 79VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IRLR934 *** MEXICO 0,95 KG 0.95 630,42 View Importer
10/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 84 VDC *** MEXICO 0,04 KG 0.04 151,39 View Importer
10/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V *** MEXICO 0,02 KG 0.02 24,17 View Importer
15/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MEXICO 0,05 KG 0.05 80,1 View Importer
15/Sep/2017 8541290000 TRANSISTORS MOS TRANZISTOR- / DATA / -ID - CONTINUOUS LEAKAGE CURRENT - 18 A, RDS ON - resistance of the drain-source 110 MOHMS, VGS - gate-source voltage of 20 V, QG - gate charge 21.3 NC, the recession 16 NS, MINIMUM Operating temperature - 55 C, PD - *** MEXICO 0,11 KG 0.11 199,78 View Importer
15/Sep/2017 8541290000 TRANSISTORS FIELD TRANSISTOR .- / DATA / -number of channel 1 POLARITY TRANSISTOR P, VDS - breakdown voltage of the drain-source - 20 V, ID - CONTINUOUS LEAKAGE CURRENT - 3.7 A, RDS ON - resistance of the drain-source 65 MOHMS, VGS - VOLTAGE the gate-source 12 V *** MEXICO 2,32 KG 2.32 1514,88 View Importer
27/Sep/2017 8541290000 Semiconductor transistor, the power dissipation of 2 W to produce a controller equipment of common purpose / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / semiconductors *** MEXICO 0,72 KG 0.72 680 View Importer
28/Sep/2017 8541290000 MOSFETs with channel N type intended for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 60 V, 120 A LEAKAGE CURRENT, 375 POWER TSR. BODY TO-220-3. LOCATED in the tape, packed in a plastic bag. : VISHAY ELECTRONI *** MEXICO 0,01 KG 0.01 29,55 View Importer
21/Sep/2017 8541290000 TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab *** MEXICO 1,72 KG 1.72 957,66 View Importer

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Our market research report and Russia export statistics of a c covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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