Lookup Russia a c imports under HS code 8542326100 from China. Search a c import data under HS code 8542326100 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
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07/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND | CHINA | 28800 | PC | 18 | 3339,85 | View Importer |
14/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND | CHINA | 14400 | PC | 10.56 | 1695,68 | View Importer |
16/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH-ES EEPROM memory 4 Mbit do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TVS "SAMSUNG" | WINBOND NO.8.KEYA | CHINA | 36000 | PC | 26.4 | 3703,93 | View Importer |
16/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory 16 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TVS "SAMSUNG" | GIGADEVICE SEMICONDUCTOR (HK) LIMITED | CHINA | 39000 | PC | 5.07 | 3240,04 | View Importer |
21/Nov/2017 | 8542326100 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: | MICRON | CHINA | 555 | PC | 0.28 | 427,84 | View Importer |
22/Nov/2017 | 8542326100 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: | MICRON | CHINA | 555 | PC | 0.58 | 429,56 | View Importer |
23/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY NOT MORE 512MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND | CHINA | 9600 | PC | 7.04 | 1026,13 | View Importer |
04/Nov/2017 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ABSENT | CHINA | 31 | PC | 0.009 | 129,11 | View Importer |
04/Nov/2017 | 8542326100 | MICROCHIP electronic integrated monolithically represents FLASH MEMORY, designed for use in telecommunications equipment. NOT possess the function of encryption (cryptographic) facilities. ARE NOT CROWBAR elect | ADESTO TECHNOLOGIES | CHINA | 11 | PC | 0.011 | 10,68 | View Importer |
12/Sep/2017 | 8542326100 | Electronic integrated circuits Monolithic Single-chip assembled, electrically erasable programmable read-only memory, flash PROM ES With a memory capacity NO MORE 512MBIT NOT WASTE NOT SCRAP, memory 64 MBIT: ALTERA ALTERA EPC | *** | CHINA | 0,3 | KG | 0.3 | 750,53 | View Importer |
12/Sep/2017 | 8542326100 | Electronic integrated circuits Monolithic Single-chip assembled, electrically erasable programmable read-only memory, flash PROM ES With a memory capacity NO MORE 512MBIT NOT WASTE NOT SCRAP, memory 16MBIT: ALTERA ALTERA EPC1 | *** | CHINA | 1,37 | KG | 1.37 | 3957,7 | View Importer |
01/Sep/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S29AL008J70TF | *** | CHINA | 0,01 | *** | 0.01 | 39,07 | View Importer |
07/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 16 MBIT. (Operating temperature range: -40 ... + 85 ° C). (NO ELECTRICAL SCRAP): MACRONIX INTERNATIONAL CO, LTD.. WITHOUT A TRADEMARK MXIC MX29LV | *** | CHINA | 0,94 | KG | 0.94 | 380,17 | View Importer |
05/Sep/2017 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (EEPROM), FOR MICROELECTRONICS APPLICATIONS: MICROCHIP FLASH MEMORY INTERFACE WITH SPI, Volume 128 MBIT, encased UDFN-8. SUPPLY VOLTAGE: 1.7 ... 2. WORKING TEMPERATURE: | *** | CHINA | 0,74 | KG | 0.74 | 583,14 | View Importer |
05/Sep/2017 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (EEPROM), FOR MICROELECTRONICS APPLICATIONS: FLASH memory chip 512 MBIT HYNIX HYNIX HYNIX H5PS5162FFR-Y5C 350 | *** | CHINA | 0,61 | KG | 0.61 | 345,92 | View Importer |
Our market research report and Russia export statistics of a c covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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