Russia A C Imports under HS Code 8542326100 from United States

Lookup Russia a c imports under HS code 8542326100 from United States. Search a c import data under HS code 8542326100 from United States.

8542326100   United States  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
14/Sep/2017 8542326100 ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT: MONOLITHIC FLASH MEMORY 512KX8, SMD 5962-96692. CM. ANNEX MICROCIRCUIT FLASH memory (ROM) - storage of program code for the microprocessor. Can be used in microp: CER *** UNITED STATES 0,4 KG 0.4 9733,07 View Importer
11/Sep/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 32 MBIT. (Operating temperature range: -40 ... + 125 C) (NOT SCRAP ELECTRIC), follow in the industrial performance, it is the products of CM. SUB: EN *** UNITED STATES 0,56 KG 0.56 45150,26 View Importer
01/Sep/2017 8542326100 ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT / NOT JOM ELECTRICAL NOT CONTAIN ENCRYPTION AND FUNCTIONS KRITOGRAFII / MICROCIRCUIT MONOLITHIC INTEGRATED ELECTRONIC FLASH EPROM, 8M CAPACITY * 8bit input voltage 1.8 / 3.3V SAMSUNG ELECTRONICS C *** UNITED STATES 0,64 KG 0.64 1929,52 View Importer
01/Sep/2017 8542326100 ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT / NOT JOM ELECTRICAL NOT CONTAIN ENCRYPTION AND FUNCTIONS KRITOGRAFII / MICROCIRCUIT MONOLITHIC INTEGRATED ELECTRONIC FLASH EEPROM MEMORY, 128 MB, VOLTAGE 2.7-3.6V INTEL INC. INTEL INTEL *** UNITED STATES 0,64 KG 0.64 1296,22 View Importer
10/Sep/2017 8542326100 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory capacity 128 MBIT is approved for use in telecommunications equipment. LIVE PIT *** UNITED STATES 0,01 KG 0.01 186,12 View Importer
13/Sep/2017 8542326100 INTEGRATED SOLID CHIPS FOR ELECTRONIC INSTRUMENT AND COMPUTER ENGINEERING (NOT SCRAP ELECTRIC): electrically erasable programmable read-only memory FLASH EPROM ES, memory 128MB, POWER 3.3V *** UNITED STATES 0,01 KG 0.01 2,5 View Importer
12/Sep/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ADESTO TECHNOLOGIES WITHOUT TRADEMARK ADESTO AT45DB161E-MHF-Y B / 20 H *** UNITED STATES 0,24 KG 0.24 284,46 View Importer
12/Sep/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 128 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR WITHOUT A TRADEMARK CYPRESS S25FL128SAGMFA000 B *** UNITED STATES 0,01 KG 0.01 16,95 View Importer
07/Sep/2017 8542326100 Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 512MEGABIT for wide application in industrial equipment NOT FOR MILITARY *** UNITED STATES 0,16 KG 0.16 164,34 View Importer
15/Sep/2017 8542326100 FLASH EPROM ES with a storage capacity not BOL. 512 MBIT NOT SCRAP, WASTE NOT USED AS A COMPONENT IN THE MANUFACTURE OF THE PRODUCTS PRODUCED electrical purposes in the Kaliningrad region. ES FLASH EPROM integrated circuit AT24CM01-S *** UNITED STATES 0,08 KG 0.08 135,37 View Importer
15/Sep/2017 8542326100 FLASH EPROM ES with a storage capacity not BOL. 512 MBIT NOT SCRAP, WASTE NOT USED AS A COMPONENT IN THE MANUFACTURE OF THE PRODUCTS PRODUCED electrical purposes in the Kaliningrad region. FLASH EPROM ES RAMTRON INTERNATIONAL CORP. R *** UNITED STATES 0,13 KG 0.13 501,8 View Importer
10/Sep/2017 8542326100 Electronic integrated circuits, ELEKTRICHESKISTIRAEMYE, with a storage capacity of up to 512 Mbit At INSTALLATION FOR ELECTRONIC CARD, packed in cardboard boxes, inside a box smaller in size WHICH ARE INTEGRATED ELECTRONIC CIRCUITS PACKED IN PLA: PT *** UNITED STATES 0,67 KG 0.67 438,32 View Importer
18/Sep/2017 8542326100 Electronic integrated circuits Monolithic COLLECTED: FLASH EPROM ES With ISP interface, memory capacity of 256 Mbits for surface mounting on a circuit board digital electronics. NOT AN ELECTRICAL CROWBAR. XCF32PVOG48C XILINX, INC. *** UNITED STATES 0,47 KG 0.47 430,75 View Importer
29/Sep/2017 8542326100 Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 256MEGABIT for wide application in industrial equipment NOT FOR MILITARY *** UNITED STATES 0,02 KG 0.02 31,97 View Importer
20/Sep/2017 8542326100 Electronic integrated circuits, MODEL "UT8QNF8M8-60XPC (RQ10)" - 1 PCS. The product is a FLASH-MEMORY TYPE NOR, VOLUME 64 Mbit TIME AND READING / RECORDING 60 NA. POWER 3.3 V is produced in an integrated monolithic circuit in a 48-pin: ceramics *** UNITED STATES 0,81 KG 0.81 1508,4 View Importer

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Our market research report and Russia export statistics of a c covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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