Lookup Russia a c imports under HS code 8542326900 from China. Search a c import data under HS code 8542326900 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
05/Sep/2017 | 8542326900 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: chip flash memory 1.8V 1G-BIT MICRON TECHNOLOGY INC. 172 MICRON MICRON PC28F00AP30TFA | *** | CHINA | 0,84 | KG | 0.84 | 1189,96 | View Importer |
04/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 0,8 | KG | 0.8 | 2661,88 | View Importer |
04/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 3,75 | KG | 3.75 | 168014,25 | View Importer |
04/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 7,55 | KG | 7.55 | 336118,14 | View Importer |
02/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0,02 | *** | 0.02 | 39,6 | View Importer |
02/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0,09 | *** | 0.09 | 90 | View Importer |
12/Sep/2017 | 8542326900 | Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED: C 2Gbit amount of memory; NOT SCRAP electrical equipment, not | *** | CHINA | 0,39 | KG | 0.39 | 539,92 | View Importer |
02/Sep/2017 | 8542326900 | Integral memory chips, memory chips 4465687461 MARKING INTEGRATED ES PROM. VOLUME 1MB ATMEL Unknown Unknown UNKNOWN AT17LV010A-10PU 80 | *** | CHINA | 0,08 | *** | 0.08 | 1120 | View Importer |
01/Sep/2017 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8192MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0,01 | *** | 0.01 | 101,68 | View Importer |
12/Sep/2017 | 8542326900 | Electronic integrated circuits, monolithic not integrated with the other components: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED, SINGLE, with a storage capacity 64GBIT; NOT SCRAP: Electrical, | *** | CHINA | 0,45 | KG | 0.45 | 5020,56 | View Importer |
12/Sep/2017 | 8542326900 | Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) assembled, with volume MEMORY 8 Gbit; NOT SCRAP: Electrical, | *** | CHINA | 2,66 | KG | 2.66 | 11986,5 | View Importer |
11/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0,01 | KG | 0.01 | 9,61 | View Importer |
11/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0,01 | KG | 0.01 | 10,87 | View Importer |
11/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE MEMORY FLASH EEPROM AR12JSFSM | *** | CHINA | *** | KG | **** | 18,2 | View Importer |
25/Sep/2017 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature 0 to + 95 8GB: INTEGRATED SILICON SOLUT WITHOUT TK B / M IS43TR16512AL-125KBL B / M 12 | *** | CHINA | 0,02 | KG | 0.02 | 451,05 | View Importer |
Our market research report and Russia export statistics of a c covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
To get complete sunglass export statistics of Russia, simply fill the Request Demo Form. You can also drop your queries through info@exportgenius.in or +91-11-47048012.
Are you looking for Russia buyers or importers of a c