Russia Ca Imports under HS Code 8541290000 from China

Lookup Russia ca imports under HS code 8541290000 from China. Search ca import data under HS code 8541290000 from China.

8541290000   China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
09/Nov/2017 8541290000 MODULE IGBT (power transistor), 1200 / 1700V, 400A, parts to the inverter TYPE ALTIVAR 61 and 71, OPTION INVERTER packed in IND. Cat. Cards. CDF. SCHNEIDER ELECTRIC CHINA 1 PC 1.114 219,76 View Importer
21/Nov/2017 8541290000 Transistors, EXCEPT phototransistor, SPARE PARTS FOR CONTROL UNIT CASH REGISTERS: ON SEMICONDUCTOR CHINA 10 PC 0.1 9,98 View Importer
23/Nov/2017 8541290000 Spare parts for the maintenance program A / M GREAT WALL: transistor. Packed in a cardboard box on a wooden pallet. HOT-PARTS CHINA 11 PC 2.2 12,61 View Importer
13/Nov/2017 8541290000 TRANSISTOR SEMICONDUCTOR With power dissipation of 20 W, follow the MOS Technology. It is designed to build ECU ELEKTROMEHANICHEKOGO power steering CAR. ART: MJD44E3T4G - 2500 pcs; THIS PRODUCT IS PROVIDED AS ON CHINA 2500 PC 1.35 399,94 View Importer
11/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET *** CHINA 0,7 KG 0.7 270,25 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 1,98 *** 1.98 291 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 0,52 *** 0.52 60 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 0,33 *** 0.33 21,82 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 0,31 *** 0.31 69 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 5,99 *** 5.99 513,53 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 0,4 *** 0.4 30,32 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 64,02 *** 64.02 8640 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in electronic equipment, do not create electromagnetic interference: The transistor assembly in the case of the module, which is a three-electrode *** CHINA 0,22 *** 0.22 4,95 View Importer
02/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode *** CHINA 1,11 *** 1.11 264,8 View Importer
01/Sep/2017 8541290000 Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE *** CHINA 1,6 *** 1.6 1704,5 View Importer

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Our market research report and Russia export statistics of ca covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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