Lookup Russia ca imports under HS code 8542323900 from China. Search ca import data under HS code 8542323900 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
20/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM), with a storage capacity more than 512 is not recorded, NOT JOM ELECTRICAL: | SAMSUNG | CHINA | 5 | PC | 0.068 | 185,5 | View Importer |
20/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM), with a storage capacity more than 512 is not recorded, NOT JOM ELECTRICAL: | SAMSUNG | CHINA | 5 | PC | 0.064 | 169,5 | View Importer |
20/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM), with a storage capacity more than 512 is not recorded, NOT JOM ELECTRICAL: | SAMSUNG | CHINA | 1 | PC | 0.016 | 61 | View Importer |
06/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, MEMORY 4Gbit: MICRON MICRON MT41K256M16TW-107 AIT: P MT41K256M16TW-107 A | *** | CHINA | 0,09 | KG | 0.09 | 73,39 | View Importer |
12/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, memory 4 HBT: MICRON MICRON EDB4432BBPA-1D-FR EDB4432BBPA-1D-FR EDB44 | *** | CHINA | 4 | KG | 4 | 5094,59 | View Importer |
02/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity to 16 GB, the maximum operating frequency of 6 | *** | CHINA | 0,76 | *** | 0.76 | 2362,5 | View Importer |
02/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, a maximum frequency of 40 | *** | CHINA | 0,06 | *** | 0.06 | 231 | View Importer |
02/Sep/2017 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, maximum operating frequency of 13 | *** | CHINA | 0,01 | *** | 0.01 | 18 | View Importer |
02/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: EL.MODUL of RAM 4GB DDR3, is designed to accelerate data exchange with computers, 4 GB and runs at 1866 MHz (COMPLETE WITH A SERVICE | *** | CHINA | 0,16 | *** | 0.16 | 78,81 | View Importer |
15/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT: EL.MODUL of RAM 4GB DDR3, INTENDED FOR ACCELERATION COMMUNICATION In the computer 4 GB and run at 1866 MHz (COMPLETE WITH SERVICE LI | *** | CHINA | 0,16 | KG | 0.16 | 78,81 | View Importer |
08/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 Mbit encryption (cryptographic) facilities and elements are missing are not intended for secretly obtaining and recording: main memory capacity: | *** | CHINA | 0,19 | KG | 0.19 | 261,74 | View Importer |
05/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / memory chip (memory devices) are designed for storing digital information (programs, configuration parameters, data | *** | CHINA | 0,02 | KG | 0.02 | 315 | View Importer |
05/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / MEMORY, integrated circuits, BLANK WITHOUT INFORMATION CAPACITY 8GB. STORAGE DEVICE is intended for storing digital INFORMA | *** | CHINA | 0,03 | KG | 0.03 | 279 | View Importer |
05/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / MEMORY, integrated circuits, BLANK WITHOUT INFORMATION FLOW 16GB. A storage device is designed to store digital information | *** | CHINA | 0,08 | KG | 0.08 | 185,5 | View Importer |
21/Sep/2017 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK B / N MT47 | *** | CHINA | 0,06 | KG | 0.06 | 303,24 | View Importer |
Our market research report and Russia export statistics of ca covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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