Lookup Russia ca imports under HS code 8542326100 from China. Search ca import data under HS code 8542326100 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
12/Sep/2017 | 8542326100 | Electronic integrated circuits Monolithic Single-chip assembled, electrically erasable programmable read-only memory, flash PROM ES With a memory capacity NO MORE 512MBIT NOT WASTE NOT SCRAP, memory 64 MBIT: ALTERA ALTERA EPC | *** | CHINA | 0,3 | KG | 0.3 | 750,53 | View Importer |
12/Sep/2017 | 8542326100 | Electronic integrated circuits Monolithic Single-chip assembled, electrically erasable programmable read-only memory, flash PROM ES With a memory capacity NO MORE 512MBIT NOT WASTE NOT SCRAP, memory 16MBIT: ALTERA ALTERA EPC1 | *** | CHINA | 1,37 | KG | 1.37 | 3957,7 | View Importer |
01/Sep/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S29AL008J70TF | *** | CHINA | 0,01 | *** | 0.01 | 39,07 | View Importer |
07/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 16 MBIT. (Operating temperature range: -40 ... + 85 ° C). (NO ELECTRICAL SCRAP): MACRONIX INTERNATIONAL CO, LTD.. WITHOUT A TRADEMARK MXIC MX29LV | *** | CHINA | 0,94 | KG | 0.94 | 380,17 | View Importer |
02/Sep/2017 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 4,94 | *** | 4.94 | 3900 | View Importer |
02/Sep/2017 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory capacity 128 MBIT is approved for use in telecommunications equipment. LIVE PIT | *** | CHINA | 0,12 | *** | 0.12 | 215 | View Importer |
08/Sep/2017 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS not integrated with the other components: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED, SINGLE, with a storage capacity 8 MBIT; NOT SCRAP electrical equipment, not | *** | CHINA | 0,15 | KG | 0.15 | 577,29 | View Importer |
05/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE FLASH EEPROM MEMORY WITH VOLUME LESS THAN 512 MBIT. (NOT SCRAP ELECTRIC) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) ADESTO TECHNOLOGIES without commodity | *** | CHINA | 0,01 | KG | 0.01 | 8,9 | View Importer |
14/Sep/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 128 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR WITHOUT A TRADEMARK CYPRESS S25FL128SAGBHI200 B | *** | CHINA | 0,24 | KG | 0.24 | 258,22 | View Importer |
08/Sep/2017 | 8542326100 | FLASH EPROM ES with a storage capacity not BOL. 512 MBIT: MEMORY CARD COMPACTFLASH, VOLUME 128MB, for use in systems for industrial automation OMRON CORPORATION OMRON HMC-EF183 HMC-EF183 HMC-EF183 10 | *** | CHINA | 0,09 | KG | 0.09 | 418,9 | View Importer |
01/Sep/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0,74 | *** | 0.74 | 2362,6 | View Importer |
01/Sep/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0,44 | *** | 0.44 | 187,39 | View Importer |
04/Sep/2017 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 1MEGABIT for wide application in industrial equipment NOT MILITARY DESTINATION | *** | CHINA | 0,01 | KG | 0.01 | 10,05 | View Importer |
04/Sep/2017 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 32MEGABIT for wide application in industrial equipment no military NAZ | *** | CHINA | 0,12 | KG | 0.12 | 136,97 | View Importer |
12/Sep/2017 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8MEGABIT for wide application in industrial equipment NOT MILITARY DESTINATION | *** | CHINA | *** | KG | **** | 2,2 | View Importer |
Our market research report and Russia export statistics of ca covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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