Lookup Russia d imports under HS code 3818009000 from China. Search d import data under HS code 3818009000 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
12/Nov/2017 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | *** | *** | 19.273 | 24236,62 | View Importer |
25/Nov/2017 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | *** | *** | 21.18 | 50092,3 | View Importer |
22/Nov/2017 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs DIAMETER 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, THEN | ABSENT | CHINA | *** | *** | 0.12 | 4500 | View Importer |
08/Nov/2017 | 3818009000 | CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete | ABSENT | CHINA | *** | *** | 0.16 | 1162,07 | View Importer |
15/Nov/2017 | 3818009000 | Monocrystalline wafers silicon carbide polished on both sides, vanadium-doped, semi-insulating, with the same conductivity over the entire surface of the plate to the ISP. As a basis for IZGOTOVLENIYAI heterostructures for microelectronics | SICC | CHINA | *** | *** | 2.36 | 38318,05 | View Importer |
08/Sep/2017 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0,17 | *** | 0.17 | 3617,25 | View Importer |
08/Sep/2017 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0,03 | *** | 0.03 | 1559,25 | View Importer |
23/Sep/2017 | 3818009000 | OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea | *** | CHINA | 5 | *** | 5 | 7500 | View Importer |
07/Sep/2017 | 3818009000 | INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE | *** | CHINA | 0,51 | *** | 0.51 | 4453,74 | View Importer |
Our market research report and Russia export statistics of d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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