Lookup Russia d imports under HS code 8541210000 from Taiwan China. Search d import data under HS code 8541210000 from Taiwan China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
14/Sep/2017 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W: Bipolar PNP 32V 500mA 200 MHz, power dissipation 0.2VT, used as a member SMD mounting on circuit boards PRINTED FOR RADIO packed in blisters feeds 300 | *** | TAIWAN CHINA | 0,41 | KG | 0.41 | 314,89 | View Importer |
14/Sep/2017 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W: TRANSISTOR RF, bipolar power dissipation 0.2 W is used as an element in SMD mounting on circuit boards PRINTED FOR RADIO packaged in blister packs TAPE IN 3000 item in | *** | TAIWAN CHINA | 0,23 | KG | 0.23 | 149,55 | View Importer |
06/Sep/2017 | 8541210000 | KEY TRANSISTORS BIPOLAR Power Dissipation 0.8 W INSTALLATION ON BOARD programmable controller in INDIV-packaging to cardboard boxes, plastic bags KEY TRANSISTORS BIPOLAR Bipolar Transistor KEY ART. IRFM150-5 | *** | TAIWAN CHINA | 0,5 | KG | 0.5 | 580,8 | View Importer |
10/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.1 | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 0,4 | View Importer |
14/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on a printed circuit board for use in a radio-electronic equipment: FIELD insulated gate, PNP-CHANNEL, power dissipation 0.25 W max. Allowable current of 0.1 A, AI | *** | TAIWAN CHINA | *** | KG | **** | 2,55 | View Importer |
14/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in electronic equipment RADIO: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.3W max. Permissible current of 0.09 A, MA | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 28,66 | View Importer |
02/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | *** | *** | **** | 2,38 | View Importer |
10/Sep/2017 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | 0,02 | KG | 0.02 | 13,07 | View Importer |
14/Sep/2017 | 8541210000 | N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage of 20 V, the power dissipation MILIVT 430 (0.43 BT), the maximum drain current 2,8A, CDF | *** | TAIWAN CHINA | 0,58 | KG | 0.58 | 927,63 | View Importer |
14/Sep/2017 | 8541210000 | N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage 60V, power dissipation MILIVT 150 (0,15VT), the maximum drain current 0.3A, Bldg | *** | TAIWAN CHINA | 0,3 | KG | 0.3 | 162,72 | View Importer |
07/Sep/2017 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | TAIWAN CHINA | 0,71 | KG | 0.71 | 3172,74 | View Importer |
07/Sep/2017 | 8541210000 | RF TRANSISTOR DESIGNED FOR USE IN TELECOMMUNICATIONS EQUIPMENT NPN -TRANZISTOR FREQUENCY TRANSMISSION TO 10 GHZ, OPERATING VOLTAGE TO E-12, the maximum output current of 30 MA, OUTPUT 0.450 BT BODY FOR SOT-323-3 POVERHNOSTNOG | *** | TAIWAN CHINA | 0,47 | KG | 0.47 | 729,73 | View Importer |
07/Sep/2017 | 8541210000 | Transistor ASSEMBLY SMD INTENDED FOR USE IN TELECOMMUNICATIONS EQUIPMENT ASSEMBLY transistor consisting of two N-channel MOSFETs and P-channel individual transistors, the constant drain current through the channel 500 milliamps | *** | TAIWAN CHINA | 0,37 | KG | 0.37 | 765,33 | View Importer |
08/Sep/2017 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 0.5W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel FAIRCHILD SEMICONDUCTOR CORPORATION FAIRC | *** | TAIWAN CHINA | 0,22 | KG | 0.22 | 386,95 | View Importer |
08/Sep/2017 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,225VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR BC846 | *** | TAIWAN CHINA | 1,54 | KG | 1.54 | 280,9 | View Importer |
Our market research report and Russia export statistics of d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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