Lookup Russia d imports under HS code 8541290000 from Japan. Search d import data under HS code 8541290000 from Japan.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
02/Nov/2017 | 8541290000 | Semiconductor FET power dissipation 31.2VT, VOLTAGE 15V, to the power amplifier TELECOMMUNICATIONS INDUSTRY N / FLM1213-6F - 2 pcs / JOM NOT NOT WASTE / NOT MILITARY NOT DOUBLE PURPOSE / NOT TO EQUIPMENT. | SUMITOMO | JAPAN | 2 | PC | 0.21 | 432,9 | View Importer |
09/Nov/2017 | 8541290000 | Semiconductor transistor, power dissipation 62VT, the DC 50 V, ARTICLE SGN2729-250H-R - 238SHT is approved for use in power amplifiers TELECOMMUNICATIONS INDUSTRY | SUMITOMO | JAPAN | 238 | PC | 3.8 | 68254,28 | View Importer |
19/Nov/2017 | 8541290000 | Semiconductor transistor, power dissipation and 31,2VT 62VT is approved for use in power amplifiers TELECOMMUNICATIONS INDUSTRY | SUMITOMO | JAPAN | 85 | PC | 1.44 | 21714,04 | View Importer |
08/Nov/2017 | 8541290000 | MODULE IGBT FUJI 2MBI1400VXB-170E-50-2 PCS. Material silicon. Is not discrete microwave transistors. Maximum Operating Temperature 150 GRAD. AS USED inventori, AC / DC converter | ABSENT | JAPAN | 2 | PC | 2.4 | 933,24 | View Importer |
13/Nov/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT Photosensitive TYPE SEMICONDUCTOR SILICON: transistor module, power dissipation 3400 BT | MITSUBISHI ELECTRIC | JAPAN | 40 | PC | 64.3 | 19007,52 | View Importer |
27/Nov/2017 | 8541290000 | SEMICONDUCTOR DEVICES: transistor modules, TYPE SEMICONDUCTOR - SILICON, FOR INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRIC. | MITSUBISHI ELECTRIC | JAPAN | 570 | PC | 185.5 | 37076,3 | View Importer |
09/Nov/2017 | 8541290000 | TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. packed in | SUMITOMO | JAPAN | 13 | PC | 0.241 | 4228,2 | View Importer |
30/Nov/2017 | 8541290000 | TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. PROVIDED | SUMITOMO | JAPAN | 2 | PC | 0.053 | 383,38 | View Importer |
13/Sep/2017 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 1MBI1500UE-330-E 4 FUJI E | *** | JAPAN | 329,3 | KG | 329.3 | 131293,82 | View Importer |
13/Sep/2017 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 2MBI1400VXB-170P-50-M 10 | *** | JAPAN | 89,35 | KG | 89.35 | 18531,3 | View Importer |
14/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: SILICON Bipolar transistors, power dissipation of 2.0 W is used as an element in SMD mounting on circuit boards PRINTED FOR RADIO packaged in blister packs TAPE IN 1000 item in plastic cassette 1-DRAWER TRANZIS | *** | JAPAN | 13,97 | KG | 13.97 | 22859,02 | View Importer |
04/Sep/2017 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0,03 | KG | 0.03 | 192,56 | View Importer |
05/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor power dissipation 1 W: POWER MODULE IGBT (transistor) for frequency conversion AC EEKTROTOKA in engines, electrical PRIBORAHMOSCHNOST DISPERSION 1.3 KW, the maximum voltage COLLECT | *** | JAPAN | 87,76 | KG | 87.76 | 25691,28 | View Importer |
13/Sep/2017 | 8541290000 | Transistors for repair and maintenance of previously imported electronics brands CANON: SM.DOPOLNENIE transistors, power dissipation 30W CANON CANON CY2-2020-000000 NO NO 28 | *** | JAPAN | 0,39 | KG | 0.39 | 215,86 | View Importer |
10/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR, for PCB mounting, POLUPROVODNIKA- TYPE SILICON, power dissipation 300W IXYS IXYS IXYS NO IXTA26P20P 200 | *** | JAPAN | 0,5 | KG | 0.5 | 309,76 | View Importer |
Our market research report and Russia export statistics of d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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