Lookup Russia d imports under HS code 8542323900 from Korea Republic Of. Search d import data under HS code 8542323900 from Korea Republic Of.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
06/Nov/2017 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B2G1646F-BCMA, VOLUME 2Gbps, 96 pin input voltage 1.5V, SIZE 13.3 * 7.5 * 1.1mm, for PROM.SBORKI monitor model LH55PMFPBGC / RU, HAS FUNCTIONS | SAMSUNG ELECTRONICS | KOREA REPUBLIC OF | 26880 | PC | 51.3 | 43029,14 | View Importer |
04/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | HYNIX SEMICONDOCTOR | KOREA REPUBLIC OF | 27200 | PC | 38.35 | 52453,84 | View Importer |
10/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | MICRON SEMICONDUCTOR ASIA PTE LTD. | KOREA REPUBLIC OF | 49248 | PC | 49.248 | 178088,16 | View Importer |
11/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | SAMT CO., LTD. | KOREA REPUBLIC OF | 22400 | PC | 44.8 | 78722,56 | View Importer |
19/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | SAMT CO., LTD. | KOREA REPUBLIC OF | 62720 | PC | 125.44 | 220423,8 | View Importer |
25/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | HYNIX SEMICONDOCTOR | KOREA REPUBLIC OF | 6400 | PC | 9.242 | 23610,56 | View Importer |
25/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | SAMT CO., LTD. | KOREA REPUBLIC OF | 3360 | PC | 6.72 | 11206,44 | View Importer |
29/Nov/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | SAMT CO., LTD. | KOREA REPUBLIC OF | 106400 | PC | 212.8 | 373933,22 | View Importer |
03/Sep/2017 | 8542323900 | MICROCIRCUITS electronic integrated monolithically (dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT) having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT JOM, civil applications FOR INDUSTRIAL MICRO | *** | KOREA REPUBLIC OF | 10 | *** | 10 | 56733,55 | View Importer |
01/Sep/2017 | 8542323900 | MICROCHIP electronic integrated monolithic, dynamic random access memory (DRAM) with a storage capacity of 4 GB which do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP elect., For the promo. ASSEMBLY TECHNOLOGY "SAMSUNG" Microcircuits integrated MES | *** | KOREA REPUBLIC OF | 47,2 | *** | 47.2 | 62423,07 | View Importer |
01/Sep/2017 | 8542323900 | MICROCHIP Electronic integrated circuits, monolithic (dynamic random access memory (DRAM) with a storage capacity of 2 Gbit having no encryption function (CRYPTOGRAPHY) NOT SCRAP Electrics., For the industrial assembly EQUIPMENT "SAMSUNG" Integrated Circuits | *** | KOREA REPUBLIC OF | 20 | *** | 20 | 112520,48 | View Importer |
18/Sep/2017 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity of 512 MBIT MORE DYNAMIC MEMORY MODULE - SDRAM of 4 GB MICRON TECHNOLOGY, INC MICRON MICRON MT16HTF51264HZ-800C1 19 | *** | KOREA REPUBLIC OF | 5,33 | KG | 5.33 | 2839,47 | View Importer |
21/Sep/2017 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC dynamical random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, MIC | *** | KOREA REPUBLIC OF | 47,77 | KG | 47.77 | 151219,12 | View Importer |
26/Sep/2017 | 8542323900 | Integrated circuits, monolithic, FOR PROM.SBORKI television Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) MT53B256M32D1, VOLUME 8GB, 200-pin input voltage 1.1-1.8V, SIZE 14.5 * 10 * 0.7mm, TV MODELS FOR PROM.SBORKI U | *** | KOREA REPUBLIC OF | 25,36 | KG | 25.36 | 171854,29 | View Importer |
26/Sep/2017 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B2G0846F-BCMA, VOLUME 2Gbps, 78 pin, 1.5V POWER SUPPLY FOR PROM.SBORKI TV MODELS UE55M5500AUXRU, HAS FUNCTIONS encryption / cryptography PACKAGING (24 1105-0 | *** | KOREA REPUBLIC OF | 66,44 | KG | 66.44 | 62306,09 | View Importer |
Our market research report and Russia export statistics of d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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