Lookup Russia d imports under HS code 8542324500 from China. Search d import data under HS code 8542324500 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
04/Nov/2017 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ALLIANCE MEMORY | CHINA | 31 | PC | 0.009 | 97,67 | View Importer |
16/Nov/2017 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ALLIANCE | CHINA | 61 | PC | 0.003 | 163,99 | View Importer |
12/Sep/2017 | 8542324500 | Electronic integrated circuits Monolithic Single-chip assembled, static random access memory (SRAM), DO NOT WASTE NOT SCRAP: CYPRESS CYPRESS CY62138FV30LL-45ZAXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZAXI 170 | *** | CHINA | 0,35 | KG | 0.35 | 222,15 | View Importer |
01/Sep/2017 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 1 Mbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): INTEGRATED DEVICE TECHNOLOGY WITHOUT TRADEMARK B / N | *** | CHINA | 0,15 | *** | 0.15 | 1296,84 | View Importer |
11/Sep/2017 | 8542324500 | Electronic integrated circuits monolithic, single, not for fire control, NOT MILITARY NOT SCRAP ELECTRIC, not integrated with the other components, designed for mounting on PCB: static random: remembering | *** | CHINA | 0,14 | KG | 0.14 | 430,84 | View Importer |
02/Sep/2017 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: monolithic integrated circuits, is a static random access memory random access, the SRAM memory type, capacity of up to 144 MB, the Working | *** | CHINA | *** | *** | **** | 48,4 | View Importer |
05/Sep/2017 | 8542324500 | Electronic integrated circuits Monolithic: static random access memory, NOT FOR MED. MINING AND MINE. NUCLEAR AND F / A equipment that is not for explosive atmospheres memory for data storage CYPRESS SEMICONDUCTOR CORPORATION CYPRESS SRAM CY7C1041DV | *** | CHINA | 0,83 | KG | 0.83 | 7089,46 | View Importer |
08/Sep/2017 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 1Mbit. Not recorded. SUPPLY VOLTAGE 5V. DIMENSIONS: 21.08 X 10.29 X 2.92MM. ARE NOT CROWBAR electrical equipment, have no function KRI: PT | *** | CHINA | *** | KG | **** | 7,26 | View Importer |
01/Sep/2017 | 8542324500 | The storage device of electronic integrated: a memory static random access, is a diagram of electronic integrated monolithic MEMORY CHIPS the SRAM, in plastic housing, 44-pin (64K * 16 bit) to Voltage. | *** | CHINA | 0,1 | *** | 0.1 | 45,26 | View Importer |
14/Sep/2017 | 8542324500 | Static RAM. It runs in the 16-SOIC surface mount package. 2.7 OPERATING VOLTAGE: .3,6V, Memory Size 16MB. It is intended for storing data processed by the processor. Used in computer, MEASUREMENT TECHNOLOGY: / H | *** | CHINA | 0,03 | KG | 0.03 | 155,57 | View Importer |
14/Sep/2017 | 8542324500 | Static RAM. Made in the case TSOP-40/44 Board Mount. OPERATING VOLTAGE 5V FORMAT 256K * 16, fast 50ns. It is intended for storing data processed by the processor. Used in computer, measuring: TECH | *** | CHINA | 0,07 | KG | 0.07 | 98,47 | View Importer |
20/Sep/2017 | 8542324500 | Electronic integrated circuits Monolithic Single-chip assembled, static random access memory (SRAM), DO NOT WASTE NOT SCRAP: RENESAS TECHNOLOGY RENESAS TECHNOLOGY R1LP0408DSP-5SI # B0 R1LP0408DSP-5SI # B0 R1LP0408DSP-5SI # B0 50 | *** | CHINA | 0,09 | KG | 0.09 | 133,81 | View Importer |
21/Sep/2017 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION In the pays, memory (RAM), Voltage: 4.5-5.5 V, Memory capacity: 256 kbps, | *** | CHINA | 0,01 | KG | 0.01 | 11,25 | View Importer |
21/Sep/2017 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 128 kbits. (Operating temperature range: 0 ... + 70 ° C) (NOT SCRAP ELECTRIC): INTEGRATED DEVICE TECHNOLOGY IDT WITHOUT A TRADEMARK | *** | CHINA | 0,01 | KG | 0.01 | 109,23 | View Importer |
23/Sep/2017 | 8542324500 | Static random access memory (SRAM), INCLUDING THE "CASH" -Memory random access / NOT SCRAP, WASTE NOT / NOT for equipment operating in explosive atmospheres / NOT WAR, NOT DOUBLE PURPOSE / static random access memory CM | *** | CHINA | 1,18 | KG | 1.18 | 11520 | View Importer |
Our market research report and Russia export statistics of d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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