Russia Device Imports under HS Code 8541100009 from United States

Lookup Russia device imports under HS code 8541100009 from United States. Search device import data under HS code 8541100009 from United States.

8541100009   United States  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
23/Nov/2017 8541100009 DIODE ASSEMBLY WITH CONNECTION CONDUCTOR (PLOT electrically) is a two-electrode semiconductor device PN type, with the transitions allows the passage CURRENT IN ONE (forward) direction and has a very large ROBINSON UNITED STATES 5 PC 0.115 141,89 View Importer
23/Nov/2017 8541100009 DIODE ASSEMBLY WITH CONNECTION CONDUCTOR (PLOT electrically) is a two-electrode semiconductor device PN type, with the transitions allows the passage CURRENT IN ONE (forward) direction and has a very large ROBINSON UNITED STATES 10 PC 0.225 312,3 View Importer
09/Nov/2017 8541100009 Semi-conductor, designed for use in systems of industrial automation civil purposes. DO NOT light-emitting ARE FREE Drago. METALS. Used in devices as a component. MICROSEMI UNITED STATES 190 PC 0.25 588,09 View Importer
11/Nov/2017 8541100009 Semi-conductor for use in systems of industrial automation CIVIL NAZNACHENIYA.ISPOLZUYUTSYA in the device as a component. MICROSEMI UNITED STATES 30 PC 0.6 3011,65 View Importer
04/Sep/2017 8541100009 DIODES .VVOZIMYE as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the total number of -61,900 PCS. DIODE BZX84C15 SOT23 SMD / DIODE RHRP301 *** UNITED STATES 28,3 KG 28.3 6187,56 View Importer
10/Sep/2017 8541100009 SEMICONDUCTOR DEVICES: DIODES FOR MOUNTING ELECTRONIC EXPANSION In: TOSHIBA CORP TOSHIBA TOSHIBA CMS04 (TE12L, Q, M) 3000 ON SEMICONDUCTOR CORP. ONSEMI ONSEMI P6SMB6.8AT3G 5000 *** UNITED STATES 1,36 KG 1.36 623,1 View Importer
10/Sep/2017 8541100009 Semiconductor devices: diodes, for mounting in the electronic board: STMICROELECTRONICS. INCORP ST ST SM15T39A 10000 ON SEMICONDUCTOR CORP. ONS ONS MMSZ5233BT1G 9000 NEXPERIA USA INC. NEXPERIA NEXPERIA BZV55-B5V6,115 7500 *** UNITED STATES 5,7 KG 5.7 1441,75 View Importer
13/Sep/2017 8541100009 DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: DIODE VOLTAGE SUPPRESSION Transient *** UNITED STATES *** KG **** 3,01 View Importer
13/Sep/2017 8541100009 DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: Schottky diodes, reverse voltage of 60 V, DIRECT *** UNITED STATES 0,01 KG 0.01 56,33 View Importer
13/Sep/2017 8541100009 DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: rectifier diodes, maximum reverse *** UNITED STATES 0,19 KG 0.19 75,03 View Importer
25/Sep/2017 8541100009 DIOD MMPN080150-C51 MACOM, represents several shunt PIN diodes, integrated into a microstrip line designed for use in microwave devices attenuator. Basic parameters: Frequency range: 2 - 35 GHz; MAXIMUM: Feedback *** UNITED STATES 0,08 KG 0.08 4920 View Importer
19/Sep/2017 8541100009 DIODES - RADIO, is a semiconductor diode (PN junction) into a plastic body having two wire ends, are used in electronic devices as an integral component. Operating temperature up to 125C. ART. STTH3012W 600SHT:. *** UNITED STATES 0,21 KG 0.21 8,58 View Importer
19/Sep/2017 8541100009 DIODES - RADIO, is a semiconductor diode (PN junction) into a plastic body having two wire ends, are used in electronic devices as an integral component. Operating temperature up to 125C. ART. 78-BZX584C2V4-V: -G *** UNITED STATES 0,26 KG 0.26 10,46 View Importer
19/Sep/2017 8541100009 DIODES - RADIO, is a semiconductor diode (PN junction) into a plastic body having two wire ends, are used in electronic devices as an integral component. Operating temperature up to 125C. ART. MURA160T3G: 30000SHT *** UNITED STATES 10,41 KG 10.41 428,9 View Importer
18/Sep/2017 8541100009 DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location *** UNITED STATES 0,02 KG 0.02 2,93 View Importer

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Our market research report and Russia export statistics of device covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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