Russia Device Imports under HS Code 8541290000 from United States

Lookup Russia device imports under HS code 8541290000 from United States. Search device import data under HS code 8541290000 from United States.

8541290000   United States  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
19/Nov/2017 8541290000 SEMICONDUCTOR DEVICES: Field transistors, ARE NOT phototransistor power dissipation 400W is designed for surface mount board industrial electronic devices not SCRAP ELECTRIC. M / A-COM UNITED STATES 20 PC 0.32 2376,46 View Importer
08/Nov/2017 8541290000 SEMICONDUCTOR DEVICES: INTEGRA TECHNOLOGIES UNITED STATES 550 PC 0.31 188850 View Importer
04/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, Transis *** UNITED STATES 26,2 KG 26.2 7215,75 View Importer
05/Sep/2017 8541290000 SEMICONDUCTOR DEVICES: Field transistors, ARE NOT phototransistor power dissipation 400W is designed for surface mount board industrial electronic devices not SCRAP ELECTRIC TYPE SEMICONDUCTOR -: SILICON *** UNITED STATES 0,17 KG 0.17 7117,25 View Importer
12/Sep/2017 8541290000 Transistor, other things, based on silicon for voltage 20V, 30W power dissipation,: POLYFET RF DEVICES "POLYFET" SQ201 SQ201 10 *** UNITED STATES 0,17 KG 0.17 676,34 View Importer
10/Sep/2017 8541290000 Semiconductor devices: transistors, for PCB mounting: TOSHIBA CORP TOSHIBA TOSHIBA TPC8125, LQ (S 2500 ZETEX SEMICONDUCTORS PLC ZTX ZTX ZXMP10A18KTC 2500 ON SEMICONDUCTOR CORP ONSEMI ONSEMI MMUN2111LT1G 27000. *** UNITED STATES 2,58 KG 2.58 1759,8 View Importer
25/Sep/2017 8541290000 Semiconductor devices: transistors, TYPE SEMICONDUCTOR - SILICON, ARE NOT phototransistor power dissipation 179 BT: NXP SEMICONDUCTORS NXP NXP PSMN1R2-25YLC, 115 otsutviem 12 *** UNITED STATES 0,01 KG 0.01 13,02 View Importer
19/Sep/2017 8541290000 Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state *** UNITED STATES 54,28 KG 54.28 1546,98 View Importer
19/Sep/2017 8541290000 Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state *** UNITED STATES 1,64 KG 1.64 50,02 View Importer
18/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 1 kV, 6.5 A LEAKAGE CURRENT, 160 POWER TSR. CDF *** UNITED STATES 0,08 KG 0.08 21,39 View Importer
18/Sep/2017 8541290000 TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 40 V, 259 A CURRENT LEAK, power 156 Tues CDF *** UNITED STATES 0,18 KG 0.18 70,58 View Importer
24/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V LEAKAGE CURRENT 8 A POWER 21.9 CS. BODY SO-8. LOCATED ON TAPE PACKED *** UNITED STATES 0,01 KG 0.01 5,22 View Importer
24/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: MOSFETs with channel P TYPE for single hole mounting on a printed circuit board adapted for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V CONTINUOUS LEAKAGE CURRENT 4 A POWER *** UNITED STATES 0,01 KG 0.01 1,77 View Importer

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Our market research report and Russia export statistics of device covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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