Check Russia import data of device under HS code 8542326900. Get import data of Russia for HS code 8542326900
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
15/Nov/2017 | 8542326900 | MICROCHIP electronic integrated - storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means flash PROM ES with a storage capacity BOL. 512 MBIT NOT SCRAP ELECTRIC, FOR INDUSTRIAL | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 23040 | PC | 42.64 | 17887,43 | View Importer |
07/Nov/2017 | 8542326900 | DEVICES REMEMBERING electrically erasable programmable single-chip ARE FREE cryptographic functions, not intended for operation in explosive atmospheres NOT INTENDED FOR RAILWAY | MICRON | *** | 38 | PC | 0.03 | 362,05 | View Importer |
14/Nov/2017 | 8542326900 | DEVICES REMEMBERING electrically erasable programmable single-chip ARE FREE cryptographic functions, not intended for operation in explosive atmospheres NOT INTENDED FOR RAILWAY | ADESTO | *** | 555 | PC | 0.116 | 1185,23 | View Importer |
24/Nov/2017 | 8542326900 | DEVICES REMEMBERING electrically erasable programmable single-chip ARE FREE cryptographic functions, not intended for operation in explosive atmospheres NOT INTENDED FOR RAILWAY | AMD | *** | 35 | PC | 0.2 | 624 | View Importer |
02/Nov/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 1 GB. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 3 | PC | 0.01 | 36,45 | View Importer |
10/Nov/2017 | 8542326900 | Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 8GB | WITHOUT TK | *** | 20 | PC | 0.02 | 218,06 | View Importer |
10/Nov/2017 | 8542326900 | Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 64GB | WITHOUT TK | *** | 7 | PC | 0.007 | 86,27 | View Importer |
16/Nov/2017 | 8542326900 | Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 64GB | WITHOUT TK | *** | 1 | PC | 0.001 | 12,36 | View Importer |
23/Nov/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 2 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 20 | PC | 0.016 | 91,2 | View Importer |
08/Sep/2017 | 8542326900 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK MICRON MT29F16G08AJADAWP-IT: D B / | *** | TAIWAN CHINA | 0,12 | KG | 0.12 | 689,99 | View Importer |
12/Sep/2017 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 2 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S34ML02G | *** | MALAYSIA | 0,78 | KG | 0.78 | 2143,42 | View Importer |
03/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory DEVICE | *** | CHINA | 1,02 | *** | 1.02 | 2807,42 | View Importer |
15/Sep/2017 | 8542326900 | Electronic integrated circuits - FLASH EPROM ES with a storage capacity greater than 512 Mbit FOR NAVIGATION EQUIPMENT NOT SCRAP ELECTRIC NOT MILITARY integrated circuits, memory devices, flash memory, volume 32768MBIT KINGSTON | *** | KOREA REPUBLIC OF | 0,23 | KG | 0.23 | 562 | View Importer |
01/Sep/2017 | 8542326900 | CHIPS-electronic integrated storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means, FLASH EPROM ES With Memory Capacity 4GB NOT NOT SCRAP ELECTRIC, FOR INDUSTRIAL MEMORY MODULE | *** | KOREA REPUBLIC OF | 22,85 | *** | 22.85 | 48596,41 | View Importer |
01/Sep/2017 | 8542326900 | CHIPS-electronic integrated storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means, FLASH EPROM ES With Memory Capacity 4GB NOT NOT SCRAP ELECTRIC, FOR INDUSTRIAL MEMORY MODULE | *** | KOREA REPUBLIC OF | 131,71 | *** | 131.71 | 179119,96 | View Importer |
Our market research report and Russia export statistics of device covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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