Lookup Russia e v imports under HS code 8541290000 from Malaysia. Search e v import data under HS code 8541290000 from Malaysia.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
14/Sep/2017 | 8541290000 | Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE | *** | MALAYSIA | 41,5 | KG | 41.5 | 11097,73 | View Importer |
06/Sep/2017 | 8541290000 | Spare parts for REMONTA- semiconductor transistor: / NOT SCRAP / / NOT WASTE / NOT FOR EQUIPMENT. WORKS. In potentially explosive atmospheres / / NOT FOR VEHICLES / NOT MILITARY / / NOT DUAL-USE / semiconductor transistor power dissipation of 10 W, | *** | MALAYSIA | 0,05 | KG | 0.05 | 45,73 | View Importer |
12/Sep/2017 | 8541290000 | TRANSISTOR DESIGNED FOR USE IN telecommunications equipment for mounting on circuit boards P-channel MOS KEY maximum constant drain-source voltage 12V, the maximum drain current is 16A, the power of 2.5 W, SOIC-8 BODY TEMPERATURE RANGE - | *** | MALAYSIA | 2,17 | KG | 2.17 | 5460,82 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,02 | KG | 0.02 | 23,62 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | *** | KG | **** | 8,45 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,04 | KG | 0.04 | 96,02 | View Importer |
08/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI | *** | MALAYSIA | 9,56 | KG | 9.56 | 844,33 | View Importer |
29/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: MOSFET, max. VOLTAGE 200V operating voltage 20V, current 4A Power dissipation 1,56VT VISHAY SEMICONDUCTORS VISHAY SEMICONDUCTORS SI4490DY-T1-GE3 12500 | *** | MALAYSIA | 12,5 | KG | 12.5 | 7049,4 | View Importer |
29/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 20 A RDS ON - resistance of the drain-source 23 MOHMS VGS TH - THRESHOLD gate-source voltage: 3.1 V VGS - VOLTAGE the gate-source: 2 | *** | MALAYSIA | 6 | KG | 6 | 3581,09 | View Importer |
29/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 23 A RDS ON - resistance of the drain-source 27 MOHMS VGS TH - THRESHOLD gate-source voltage 2 V VGS - VOLTAGE the gate-source: 20 | *** | MALAYSIA | 2,5 | KG | 2.5 | 804,81 | View Importer |
19/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 1W power dissipation for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container VISHAY INTERTECHNOLOGY INC. VISHAY IRFD420 | *** | MALAYSIA | 1,38 | KG | 1.38 | 757,62 | View Importer |
21/Sep/2017 | 8541290000 | TRANSISTOR prednazanachen SOLELY FOR RECEIVER ONKYO TX-SR608, BIPOLAR, NPN - TYPE; VOLTAGE 20V output power 20W,:. Packed in KART.KOROB. "ONKYO ASIA ELECTRONICS SDN. BHD." MALAYSIA, "ONKYO" 2202843 10 | *** | MALAYSIA | 0,1 | KG | 0.1 | 42,66 | View Importer |
21/Sep/2017 | 8541290000 | TRANSISTOR prednazanachen SOLELY FOR RECEIVER ONKYO TX-SR608, BIPOLAR, NPN - TYPE; VOLTAGE 20V output power 20W,:. Packed in KART.KOROB. "ONKYO ASIA ELECTRONICS SDN. BHD." MALAYSIA, "ONKYO" 2202833 10 | *** | MALAYSIA | 0,1 | KG | 0.1 | 43,66 | View Importer |
20/Sep/2017 | 8541290000 | TRANSISTORS SILICON C dissipation 1 W FOR VARIOUS RADIO AND ELECTRICAL PURPOSE, bipolar NPN silicon transistors, voltage 80V, N-RASSEIVANIYA1,5VT POWER CHANNEL TIR silicon transistors VOLTAGE 40V, M | *** | MALAYSIA | 7,11 | KG | 7.11 | 2799 | View Importer |
20/Sep/2017 | 8541290000 | Silicon Transistors C Power Dissipation 1 W FOR ELECTRONICS AND ELECTRICAL EQUIPMENT FOR VARIOUS PURPOSES, bipolar NPN silicon transistors, voltage 45V, power dissipation 4,6VT BIPOLAR NPN silicon transistors, voltage 50V, M | *** | MALAYSIA | 7,76 | KG | 7.76 | 4341 | View Importer |
Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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