Lookup Russia e v imports under HS code 8541290000 from Taiwan China. Search e v import data under HS code 8541290000 from Taiwan China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
17/Nov/2017 | 8541290000 | FIELD voltage of the transistor -20V, power dissipation 1.56VT are designed for portable electronic devices civil purposes, NOT AN ELECTRICAL CROWBAR. | WITHOUT A TRADEMARK | TAIWAN CHINA | 351000 | PC | 19.8 | 18254,63 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 1.6 V | *** | TAIWAN CHINA | 0,05 | KG | 0.05 | 1,15 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 2.1 V | *** | TAIWAN CHINA | 0,05 | KG | 0.05 | 1,15 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.5 V | *** | TAIWAN CHINA | 0,2 | KG | 0.2 | 4,48 | View Importer |
14/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 3.8 V | *** | TAIWAN CHINA | 0,02 | KG | 0.02 | 6,12 | View Importer |
14/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in electronic equipment, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PN-CHANNEL, power dissipation 7.5 V | *** | TAIWAN CHINA | 0,03 | KG | 0.03 | 0,58 | View Importer |
10/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, CREATE ELECTROMAGNETIC INTERFERENCE: TRANSISTOR FIELD OF DISPERSION maximum power of 150 W, the maximum drain-source voltage of 200 V, 18 A FORCE TO CURRENT | *** | TAIWAN CHINA | 0,05 | KG | 0.05 | 27,73 | View Importer |
01/Sep/2017 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on 100 BREAKDOWN VOLTAGE | *** | TAIWAN CHINA | 0,2 | *** | 0.2 | 1821,32 | View Importer |
01/Sep/2017 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 | *** | TAIWAN CHINA | *** | *** | **** | 3,09 | View Importer |
05/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation | *** | TAIWAN CHINA | 0,16 | KG | 0.16 | 186,68 | View Importer |
06/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint | *** | TAIWAN CHINA | 18,8 | KG | 18.8 | 5141,75 | View Importer |
29/Sep/2017 | 8541290000 | FETs OPERATING VOLTAGE 30:: VISHAY SILICONIX WITHOUT TK B / M SI6415DQ-T1-E3 B / M 5 INFINEON TECHNOLOGIES AG WITHOUT TK B / M IRF9358PBF B / M 15 | *** | TAIWAN CHINA | 0,02 | KG | 0.02 | 24,4 | View Importer |
29/Sep/2017 | 8541290000 | Field effect transistors OPERATING VOLTAGE 5.5: INFINEON TECHNOLOGIES AG WITHOUT TK B / M AUIRFR5305TRL B / M 15 | *** | TAIWAN CHINA | 0,02 | KG | 0.02 | 25,49 | View Importer |
24/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.3 V | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 0,7 | View Importer |
24/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 1.5 V | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 1,5 | View Importer |
Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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