Lookup Russia e v imports under HS code 8541290000 from Thailand. Search e v import data under HS code 8541290000 from Thailand.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
12/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: SEMICONDUCTOR MODULE insulated-gate bipolar transistor, power dissipation is 60 watts, collector-emitter voltage of 600 V, 19 A CURRENT CODE OKP 3,417,810, INTENDED FOR USE IN pulse source PI | *** | THAILAND | 0,21 | KG | 0.21 | 225,01 | View Importer |
12/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: NPN bipolar transistor structure, the power dissipation of 1.75 BT current 6 A Housing type TO-252-3, collector-emitter voltage 100 V CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT ON SEMICOND | *** | THAILAND | 0,05 | KG | 0.05 | 35,88 | View Importer |
19/Sep/2017 | 8541290000 | FET power dissipation BT 375, the source-drain VOLTAGE 150V, SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY,: INFINEON TECHNOLOGIES INFINEON TECHNOLOGIES, CHINA IPT059N15N | *** | THAILAND | 0,01 | KG | 0.01 | 117,52 | View Importer |
25/Sep/2017 | 8541290000 | TRANSISTOR. MODEL "IRFS4610TRLPBF" -33 pcs. The product is a field-effect transistor power dissipation of 190 watts and a voltage between the source-drain to 100 volts. Is designed in surface mount package. Information on the type: semiconductor | *** | THAILAND | 0,06 | KG | 0.06 | 88,72 | View Importer |
25/Sep/2017 | 8541290000 | TRANSISTOR. MODEL "IRFS52N15DPBF" -41 pcs. The product is a field effect transistor with the maximum power DISPERSION to 320 watts and a voltage between the source-drain to 150 volts. Is designed in surface mount package. : SUPPLIED | *** | THAILAND | 0,11 | KG | 0.11 | 81,05 | View Importer |
27/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, maximum collector current 1 A. CASE SOT-89-3. power dissipation | *** | THAILAND | 0,05 | KG | 0.05 | 8,7 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 150 V, CURRENT LEAKAGE | *** | THAILAND | 0,13 | KG | 0.13 | 69,1 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, CURRENT LEAKAGE | *** | THAILAND | 0,08 | KG | 0.08 | 19,04 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 600 V, 7.3 A CURRENT LEAK, power 63 Tues. CDF | *** | THAILAND | 0,03 | KG | 0.03 | 3,45 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, 11 LEAKAGE CURRENT A POWER 1.9 TSR. CORP | *** | THAILAND | 0,06 | KG | 0.06 | 19,5 | View Importer |
27/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, the maximum collector current of 0.5 A. CASE SOT-89-3. POWER PAC | *** | THAILAND | 0,08 | KG | 0.08 | 10,61 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, CURRENT LEAKAGE | *** | THAILAND | 0,02 | KG | 0.02 | 7,02 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source of 20 V, LEAKAGE CURRENT | *** | THAILAND | 0,04 | KG | 0.04 | 11,37 | View Importer |
22/Sep/2017 | 8541290000 | Power transistors for amplification, GENERATION AND TRANSFORMATION OF ELECTRIC SIGNALS IN ALL MODELS OUTDOOR UNITS multizone "split-systems" MHI KX6 "Power Dissipation 347 BT, 3-phase, 380 V" MACO-MHI / MAHAJAC AIR CON CO. LTD ", factory" MITSUBISHI HEA | *** | THAILAND | 2 | KG | 2 | 1675,96 | View Importer |
Our market research report and Russia export statistics of e v covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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