Lookup Russia electronic imports under HS code 8541290000 from Japan. Search electronic import data under HS code 8541290000 from Japan.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
13/Sep/2017 | 8541290000 | Transistors for repair and maintenance of previously imported electronics brands CANON: SM.DOPOLNENIE transistors, power dissipation 30W CANON CANON CY2-2020-000000 NO NO 28 | *** | JAPAN | 0,39 | KG | 0.39 | 215,86 | View Importer |
01/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 34W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) INFINEON TECHNOLOGIES AG INFINE | *** | JAPAN | 0,04 | *** | 0.04 | 25,25 | View Importer |
01/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation of 110 W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | JAPAN | 2,83 | *** | 2.83 | 804,6 | View Importer |
12/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 2,1VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel INFINEON TECHNOLOGIES AG INFINEON AUIRFL0 | *** | JAPAN | *** | KG | **** | 994,27 | View Importer |
14/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,6VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER PAC | *** | JAPAN | 1,34 | KG | 1.34 | 542,14 | View Importer |
14/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 130W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IRF540 | *** | JAPAN | 0,03 | KG | 0.03 | 3,4 | View Importer |
14/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 110W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON AUIRFR | *** | JAPAN | 0,13 | KG | 0.13 | 103,39 | View Importer |
14/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 100BT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER RA | *** | JAPAN | 0,07 | KG | 0.07 | 21,7 | View Importer |
14/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 20W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) FAIRCHILD SEMICONDUCTOR CORPORA | *** | JAPAN | 0,22 | KG | 0.22 | 42,86 | View Importer |
14/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). CUT is packaged in blisters Feed DIODES INCORPORATED DIODES INCORPORATED ZX | *** | JAPAN | 0,05 | KG | 0.05 | 54,58 | View Importer |
08/Sep/2017 | 8541290000 | SEMICONDUCTOR BIPOLAR TRANSISTOR. The collector current of 80 A. -EMITTER collector voltage of 300 V. Power Dissipation 400W. PRIMENENIE- INDUSTRIAL AND CONSUMER ELECTRONICS:: IXYS INTEGRATED CIRCUITS. PHILIPPINES IXYS INTEGRATED CIRCUITS IXBT32N300HV I | *** | JAPAN | 0,17 | KG | 0.17 | 1,92 | View Importer |
21/Sep/2017 | 8541290000 | Power FET SMD BASED gallium arsenide are intended for use in electronics PARTICULARLY IN bandpass amplifier, devices Radiocommunications - NOT A WASTE ELECTRICAL OR CROWBAR: VOLTAGE | *** | JAPAN | 0,09 | KG | 0.09 | 1221,74 | View Importer |
16/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | JAPAN | 0,28 | KG | 0.28 | 6,28 | View Importer |
16/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 | *** | JAPAN | 0,4 | KG | 0.4 | 9,12 | View Importer |
16/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.5 V | *** | JAPAN | 1,74 | KG | 1.74 | 39,29 | View Importer |
Our market research report and Russia export statistics of electronic covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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