Lookup Russia electronic imports under HS code 8541290000 from Taiwan China. Search electronic import data under HS code 8541290000 from Taiwan China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
17/Nov/2017 | 8541290000 | FIELD voltage of the transistor -20V, power dissipation 1.56VT are designed for portable electronic devices civil purposes, NOT AN ELECTRICAL CROWBAR. | WITHOUT A TRADEMARK | TAIWAN CHINA | 351000 | PC | 19.8 | 18254,63 | View Importer |
04/Sep/2017 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0,65 | KG | 0.65 | 5716,32 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | TAIWAN CHINA | 0,07 | KG | 0.07 | 1,52 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | TAIWAN CHINA | 0,25 | KG | 0.25 | 5,62 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 6.25 | *** | TAIWAN CHINA | 3,06 | KG | 3.06 | 69,63 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 13,46 | KG | 13.46 | 397,33 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 8,87 | KG | 8.87 | 198,6 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 | *** | TAIWAN CHINA | 9,74 | KG | 9.74 | 318,06 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | TAIWAN CHINA | 15,18 | KG | 15.18 | 340,16 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 | *** | TAIWAN CHINA | 27,36 | KG | 27.36 | 613 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NP-CHANNEL, power dissipation 1.1 | *** | TAIWAN CHINA | 1,39 | KG | 1.39 | 31,42 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 0,19 | KG | 0.19 | 4,23 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 1.6 V | *** | TAIWAN CHINA | 0,05 | KG | 0.05 | 1,15 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 | *** | TAIWAN CHINA | 0,07 | KG | 0.07 | 1,54 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 98 A, | *** | TAIWAN CHINA | 0,03 | KG | 0.03 | 0,68 | View Importer |
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