Lookup Russia electronic imports under HS code 8541290000 from Thailand. Search electronic import data under HS code 8541290000 from Thailand.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
01/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 85W power dissipation for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER PAC | *** | THAILAND | 2,2 | *** | 2.2 | 333,4 | View Importer |
01/Sep/2017 | 8541290000 | Transistor: MODULE TRANSISTOR SEMICONDUCTOR power dissipation 1,4VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR MO | *** | THAILAND | 12,49 | *** | 12.49 | 4537,86 | View Importer |
01/Sep/2017 | 8541290000 | Transistor: IGBT module SEMICONDUCTOR TRANSISTORS Power dissipation 155W FOR INDUSTRIAL ELECTRONIC EQUIPMENT. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). --Cartoned INFINEON TECHNOLOGIES | *** | THAILAND | 0,44 | *** | 0.44 | 88,76 | View Importer |
01/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 62,5VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR NTD24N | *** | THAILAND | 1,15 | *** | 1.15 | 469,44 | View Importer |
08/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation of 150W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Trough- packed in plastic trays (trays) TOSHIBA CORPORATION TOSHIBA 2S | *** | THAILAND | 4,23 | KG | 4.23 | 441,32 | View Importer |
08/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor. NOT SCRAP ELECTRIC, INTENDED FOR FOR consumer electronics: the IGBT MODULE semiconductor power dissipation 625VT FOR INDUSTRIAL ELECTRONIC EQUIPMENT. TYPE SEMICONDUCTOR - ODN | *** | THAILAND | 6,65 | KG | 6.65 | 1960,29 | View Importer |
21/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 200T for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER PAC | *** | THAILAND | 2,03 | KG | 2.03 | 555,72 | View Importer |
20/Sep/2017 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 417VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IPW90R | *** | THAILAND | 0,04 | KG | 0.04 | 61,92 | View Importer |
27/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, maximum collector current 1 A. CASE SOT-89-3. power dissipation | *** | THAILAND | 0,05 | KG | 0.05 | 8,7 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 150 V, CURRENT LEAKAGE | *** | THAILAND | 0,13 | KG | 0.13 | 69,1 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, CURRENT LEAKAGE | *** | THAILAND | 0,08 | KG | 0.08 | 19,04 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 600 V, 7.3 A CURRENT LEAK, power 63 Tues. CDF | *** | THAILAND | 0,03 | KG | 0.03 | 3,45 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, 11 LEAKAGE CURRENT A POWER 1.9 TSR. CORP | *** | THAILAND | 0,06 | KG | 0.06 | 19,5 | View Importer |
27/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, the maximum collector current of 0.5 A. CASE SOT-89-3. POWER PAC | *** | THAILAND | 0,08 | KG | 0.08 | 10,61 | View Importer |
27/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, CURRENT LEAKAGE | *** | THAILAND | 0,02 | KG | 0.02 | 7,02 | View Importer |
Our market research report and Russia export statistics of electronic covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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