Lookup Russia electronic imports under HS code 8542324500 from China. Search electronic import data under HS code 8542324500 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
04/Nov/2017 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ALLIANCE MEMORY | CHINA | 31 | PC | 0.009 | 97,67 | View Importer |
16/Nov/2017 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ALLIANCE | CHINA | 61 | PC | 0.003 | 163,99 | View Importer |
04/Nov/2017 | 8542324500 | MICROCHIP electronic integrated monolithically represents the memory SRAM, for use in telecommunications equipment. NOT possess the function of encryption (cryptographic) facilities. ARE NOT CROWBAR elect | CYPRESS SEMICONDUCTOR | CHINA | 20 | PC | 0.02 | 21,55 | View Importer |
12/Sep/2017 | 8542324500 | Electronic integrated circuits Monolithic Single-chip assembled, static random access memory (SRAM), DO NOT WASTE NOT SCRAP: CYPRESS CYPRESS CY62138FV30LL-45ZAXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZAXI 170 | *** | CHINA | 0,35 | KG | 0.35 | 222,15 | View Importer |
01/Sep/2017 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 1 Mbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): INTEGRATED DEVICE TECHNOLOGY WITHOUT TRADEMARK B / N | *** | CHINA | 0,15 | *** | 0.15 | 1296,84 | View Importer |
04/Sep/2017 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY, INC. WITHOUT A TRADEMARK ALLIANCE M | *** | CHINA | 0,02 | KG | 0.02 | 165,76 | View Importer |
11/Sep/2017 | 8542324500 | Electronic integrated circuits monolithic, single, not for fire control, NOT MILITARY NOT SCRAP ELECTRIC, not integrated with the other components, designed for mounting on PCB: static random: remembering | *** | CHINA | 0,14 | KG | 0.14 | 430,84 | View Importer |
02/Sep/2017 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE: monolithic integrated circuit is a static random access memory a random-access memory type SRAM, up to 4 MB WORKING | *** | CHINA | *** | *** | **** | 7 | View Importer |
02/Sep/2017 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: monolithic integrated circuits, is a static random access memory random access, the SRAM memory type, capacity of up to 144 MB, the Working | *** | CHINA | *** | *** | **** | 48,4 | View Importer |
05/Sep/2017 | 8542324500 | Electronic integrated circuits: static memory (SRAM), 2 Mbit, 3 V, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, PHILIPPINES CYPRESS SEMICONDUCTOR, PHILIPPINES CY62136VLL-55ZI MEMORY 18 | *** | CHINA | 0,01 | KG | 0.01 | 46,39 | View Importer |
05/Sep/2017 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS: static memory (SRAM), 4Mb, a voltage 5.5 V, current of 90 MA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, PHILIPPINES CYPRESS SEMICONDUCTOR, PHILIPPINES CY7C1041D-10ZSXI MEMORY 110 | *** | CHINA | 0,11 | KG | 0.11 | 302,43 | View Importer |
05/Sep/2017 | 8542324500 | Electronic integrated circuits: static memory (SRAM), 16Mbps, voltage 3.6 V, current 175 MA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CY7C1069DV33-10ZSXI MEMORY 120 | *** | CHINA | 0,08 | KG | 0.08 | 5790,31 | View Importer |
05/Sep/2017 | 8542324500 | Electronic integrated circuits Monolithic: static random access memory, NOT FOR MED. MINING AND MINE. NUCLEAR AND F / A equipment that is not for explosive atmospheres memory for data storage CYPRESS SEMICONDUCTOR CORPORATION CYPRESS SRAM CY7C1041DV | *** | CHINA | 0,83 | KG | 0.83 | 7089,46 | View Importer |
08/Sep/2017 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 1Mbit. Not recorded. SUPPLY VOLTAGE 5V. DIMENSIONS: 21.08 X 10.29 X 2.92MM. ARE NOT CROWBAR electrical equipment, have no function KRI: PT | *** | CHINA | *** | KG | **** | 7,26 | View Importer |
15/Sep/2017 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 125 C) (NOT SCRAP ELECTRIC): INTEGRATED SILICON SOLUTION, INC. WITHOUT PRESENTATION ZNA | *** | CHINA | 0,04 | KG | 0.04 | 135,15 | View Importer |
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