Lookup Russia g g imports under HS code 8541290000 from Malaysia. Search g g import data under HS code 8541290000 from Malaysia.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
23/Nov/2017 | 8541290000 | SEMICONDUCTOR DEVICES: MOSFET insulated gate SERIES TPN4R712MD; INTENDED FOR USE IN LITHIUM-ion secondary batteries, in the switch power management in notebooks, PCs and so on. (NOT SCRAP ELECTRIC) | TOSHIBA | MALAYSIA | 30000 | PC | 0.6 | 6916,06 | View Importer |
14/Sep/2017 | 8541290000 | Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE | *** | MALAYSIA | 41,5 | KG | 41.5 | 11097,73 | View Importer |
02/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 34 A, | *** | MALAYSIA | 1,62 | *** | 1.62 | 1512 | View Importer |
14/Sep/2017 | 8541290000 | Transistor module (IGBT-Modules), power dissipation BT 1595, NEW consist of one insulated-gate bipolar transistor MANUFACTURER: FUJI PRODUCT TYPE: IGBT MODULE TYPE: transistor IGBT MODULE CODE: 1MBI600U4-120 GENERAL INFORMATION: IG | *** | MALAYSIA | 69,1 | KG | 69.1 | 30735,19 | View Importer |
14/Sep/2017 | 8541290000 | Transistor module (IGBT-Modules), power dissipation BT 1595, NEW consist of one insulated-gate bipolar transistor MANUFACTURER: FUJI PRODUCT TYPE: IGBT MODULE CODE: 2MBI450VN-120-50-M GENERAL INFORMATION: IGBT- BIPOLAR TRANSISTOR | *** | MALAYSIA | 9,7 | KG | 9.7 | 1804,17 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,02 | KG | 0.02 | 23,62 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | *** | KG | **** | 8,45 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,04 | KG | 0.04 | 96,02 | View Importer |
08/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI | *** | MALAYSIA | 9,56 | KG | 9.56 | 844,33 | View Importer |
27/Sep/2017 | 8541290000 | MODULES insulated-gate bipolar transistor (IGBT), DISPERSION OVER POWER 1W. (NO ELECTRICAL SCRAP): power exceeding 10 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N DZ800S17K3 B / H 160 | *** | MALAYSIA | 57,89 | KG | 57.89 | 13036,98 | View Importer |
27/Sep/2017 | 8541290000 | Semiconductor devices: transistors, gathered in Modules: INFINEON TECHNOLOGIES AG INFINEON INFINEON FP50R12KT3BOSA1 10 | *** | MALAYSIA | 3,6 | KG | 3.6 | 507,8 | View Importer |
27/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MODULES insulated-gate bipolar transistor (IGBT), the power dissipation 1600W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N FF300R12ME4_B11 B / 3 H | *** | MALAYSIA | 1,04 | KG | 1.04 | 328,01 | View Importer |
19/Sep/2017 | 8541290000 | Bipolar transistors, for use in telecommunications equipment. NOT A CROWBAR ELEKTROOOBRUDOVANIYA. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. TECHNICAL FEATURES: - In | *** | MALAYSIA | 38,7 | KG | 38.7 | 23798,34 | View Importer |
29/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: MOSFET, max. VOLTAGE 200V operating voltage 20V, current 4A Power dissipation 1,56VT VISHAY SEMICONDUCTORS VISHAY SEMICONDUCTORS SI4490DY-T1-GE3 12500 | *** | MALAYSIA | 12,5 | KG | 12.5 | 7049,4 | View Importer |
29/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MOSFET VDS - breakdown voltage of the drain-source 80 V ID - CONSTANT CURRENT LEAKS: 20 A RDS ON - resistance of the drain-source 23 MOHMS VGS TH - THRESHOLD gate-source voltage: 3.1 V VGS - VOLTAGE the gate-source: 2 | *** | MALAYSIA | 6 | KG | 6 | 3581,09 | View Importer |
Our market research report and Russia export statistics of g g covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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