Lookup Russia g g imports under HS code 8541290000 from Mexico. Search g g import data under HS code 8541290000 from Mexico.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
10/Sep/2017 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 84 VDC | *** | MEXICO | 0,04 | KG | 0.04 | 151,39 | View Importer |
10/Sep/2017 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V | *** | MEXICO | 0,02 | KG | 0.02 | 24,17 | View Importer |
15/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MEXICO | 0,05 | KG | 0.05 | 80,1 | View Importer |
15/Sep/2017 | 8541290000 | TRANSISTORS MOS TRANZISTOR- / DATA / -ID - CONTINUOUS LEAKAGE CURRENT - 18 A, RDS ON - resistance of the drain-source 110 MOHMS, VGS - gate-source voltage of 20 V, QG - gate charge 21.3 NC, the recession 16 NS, MINIMUM Operating temperature - 55 C, PD - | *** | MEXICO | 0,11 | KG | 0.11 | 199,78 | View Importer |
15/Sep/2017 | 8541290000 | TRANSISTORS FIELD TRANSISTOR .- / DATA / -number of channel 1 POLARITY TRANSISTOR P, VDS - breakdown voltage of the drain-source - 20 V, ID - CONTINUOUS LEAKAGE CURRENT - 3.7 A, RDS ON - resistance of the drain-source 65 MOHMS, VGS - VOLTAGE the gate-source 12 V | *** | MEXICO | 2,32 | KG | 2.32 | 1514,88 | View Importer |
21/Sep/2017 | 8541290000 | TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab | *** | MEXICO | 1,72 | KG | 1.72 | 957,66 | View Importer |
26/Sep/2017 | 8541290000 | Other transistors, phototransistor EXCEPT: CM. ANNEX powerful power bipolar transistor BRAND IGBT insulated gate for voltage 600V, amperage 70A, 1.5 kW power dissipation, FOR OIL FIELD EQUIPMENT FOR USE IN THE NAVE | *** | MEXICO | 0,55 | KG | 0.55 | 1095,19 | View Importer |
26/Sep/2017 | 8541290000 | Other transistors, phototransistor EXCEPT: CM. ANNEX powerful power bipolar transistor BRAND IGBT insulated gate for voltage 600V, amperage 70A, 1.5 kW power dissipation, FOR OIL FIELD EQUIPMENT FOR USE IN THE NAVE | *** | MEXICO | 0,25 | KG | 0.25 | 634,38 | View Importer |
Our market research report and Russia export statistics of g g covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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