Russia G G Imports under HS Code 8541290000 from Mexico

Lookup Russia g g imports under HS code 8541290000 from Mexico. Search g g import data under HS code 8541290000 from Mexico.

8541290000   Mexico  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
10/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 84 VDC *** MEXICO 0,04 KG 0.04 151,39 View Importer
10/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V *** MEXICO 0,02 KG 0.02 24,17 View Importer
15/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MEXICO 0,05 KG 0.05 80,1 View Importer
15/Sep/2017 8541290000 TRANSISTORS MOS TRANZISTOR- / DATA / -ID - CONTINUOUS LEAKAGE CURRENT - 18 A, RDS ON - resistance of the drain-source 110 MOHMS, VGS - gate-source voltage of 20 V, QG - gate charge 21.3 NC, the recession 16 NS, MINIMUM Operating temperature - 55 C, PD - *** MEXICO 0,11 KG 0.11 199,78 View Importer
15/Sep/2017 8541290000 TRANSISTORS FIELD TRANSISTOR .- / DATA / -number of channel 1 POLARITY TRANSISTOR P, VDS - breakdown voltage of the drain-source - 20 V, ID - CONTINUOUS LEAKAGE CURRENT - 3.7 A, RDS ON - resistance of the drain-source 65 MOHMS, VGS - VOLTAGE the gate-source 12 V *** MEXICO 2,32 KG 2.32 1514,88 View Importer
21/Sep/2017 8541290000 TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab *** MEXICO 1,72 KG 1.72 957,66 View Importer
26/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: CM. ANNEX powerful power bipolar transistor BRAND IGBT insulated gate for voltage 600V, amperage 70A, 1.5 kW power dissipation, FOR OIL FIELD EQUIPMENT FOR USE IN THE NAVE *** MEXICO 0,55 KG 0.55 1095,19 View Importer
26/Sep/2017 8541290000 Other transistors, phototransistor EXCEPT: CM. ANNEX powerful power bipolar transistor BRAND IGBT insulated gate for voltage 600V, amperage 70A, 1.5 kW power dissipation, FOR OIL FIELD EQUIPMENT FOR USE IN THE NAVE *** MEXICO 0,25 KG 0.25 634,38 View Importer

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Our market research report and Russia export statistics of g g covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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