Russia G G Imports under HS Code 8541290000 from Taiwan China

Lookup Russia g g imports under HS code 8541290000 from Taiwan China. Search g g import data under HS code 8541290000 from Taiwan China.

8541290000   Taiwan China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
04/Sep/2017 8541290000 SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical *** TAIWAN CHINA 0,65 KG 0.65 5716,32 View Importer
04/Sep/2017 8541290000 MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, PD - power dissipation of 150 W, RISE TIME: 15 NS, SERIES: IXTA3N120. Used in various schemes for TV, audio, video and radio broadcasting, MOBILE DEVICES: COMMUNICATION / *** TAIWAN CHINA 0,1 KG 0.1 187,08 View Importer
04/Sep/2017 8541290000 MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, Resistance Drain-26 MOHMS, power dissipation: 1.79 W. used in various schemes for TV, audio, video and broadcasting, in device CELLULAR / NOT FOR: Consumer *** TAIWAN CHINA *** KG **** 8,96 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, *** TAIWAN CHINA 0,07 KG 0.07 1,52 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A *** TAIWAN CHINA 0,25 KG 0.25 5,62 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 6.25 *** TAIWAN CHINA 3,06 KG 3.06 69,63 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 *** TAIWAN CHINA 13,46 KG 13.46 397,33 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 *** TAIWAN CHINA 8,87 KG 8.87 198,6 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 *** TAIWAN CHINA 9,74 KG 9.74 318,06 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, *** TAIWAN CHINA 15,18 KG 15.18 340,16 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 *** TAIWAN CHINA 27,36 KG 27.36 613 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NP-CHANNEL, power dissipation 1.1 *** TAIWAN CHINA 1,39 KG 1.39 31,42 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 *** TAIWAN CHINA 0,19 KG 0.19 4,23 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 1.6 V *** TAIWAN CHINA 0,05 KG 0.05 1,15 View Importer
07/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 *** TAIWAN CHINA 0,07 KG 0.07 1,54 View Importer

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