Lookup Russia g g imports under HS code 8541290000 from United States. Search g g import data under HS code 8541290000 from United States.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
11/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: FET TYPE N-CH, ON VOLTAGE 1000V, amperage 6A, the power dissipation of 2.5 BT 2 PCS. INCLUDED AS PART kit for geophysical instruments CMRS-B, ART. 100464251 - 1 pc., FOR USE IN OIL | *** | UNITED STATES | 0,12 | KG | 0.12 | 119,78 | View Importer |
10/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 2.6 V | *** | UNITED STATES | 12,6 | KG | 12.6 | 9025 | View Importer |
10/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 4.2 A | *** | UNITED STATES | 0,05 | KG | 0.05 | 278,85 | View Importer |
13/Sep/2017 | 8541290000 | FET high-frequency transistors D1008UK, PRODUCED BY TT ELECTRONICS, is a multifunctional semiconductor electronic appliance from silicon. It is an integral turn-on push-pull configuration. It belongs to a group MOS | *** | UNITED STATES | 0,73 | KG | 0.73 | 15556,5 | View Importer |
13/Sep/2017 | 8541290000 | FET TRANSISTOR IRG4BC30WPBF manufactured by INFINEON IS insulated-gate bipolar transistor. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level. It has a high | *** | UNITED STATES | 0,14 | KG | 0.14 | 176,5 | View Importer |
05/Sep/2017 | 8541290000 | Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300 | *** | UNITED STATES | 0,05 | KG | 0.05 | 650,64 | View Importer |
13/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS FOR GAIN. Generating and converting electrical signals into instrumentation, (NOT SCRAP ELECTRIC): TYPE SEMICONDUCTOR - germanium dioxide (GEO2). 300 power dissipation BT IXYS CORPORATION IXYS IXFH40N30 20 | *** | UNITED STATES | 0,01 | KG | 0.01 | 0,6 | View Importer |
13/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS FOR GAIN. Generating and converting electrical signals into engineering. TYPE SEMICONDUCTOR - germanium dioxide (GEO2). Power dissipation 125 BT: SEMICONDUCTOR TRANSISTORS FOR GAIN. GENERATION AND PRE | *** | UNITED STATES | 0,05 | KG | 0.05 | 1,52 | View Importer |
13/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS FOR GAIN. Generating and converting electrical signals into instrumentation, (NOT SCRAP ELECTRIC): TYPE SEMICONDUCTOR - germanium dioxide (GEO2). Power dissipation 1,08BT DIODES INC ZETEX DMP3098L-July 23 | *** | UNITED STATES | 0,02 | KG | 0.02 | 0,46 | View Importer |
13/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS FOR GAIN. Generating and converting electrical signals into instrumentation, (NOT SCRAP ELECTRIC): TYPE SEMICONDUCTOR - germanium dioxide (GEO2). Power dissipation 47 BT INFINEON TECHNOLOGIES AG INFINEON BS | *** | UNITED STATES | 0,3 | KG | 0.3 | 10 | View Importer |
06/Sep/2017 | 8541290000 | Transistors for use in fiber-optic technology TRANSISTOR TRANS PNP GP 500MA 45V SOT23 NEXPERIA, CHINA NO NO NO NO 10000 | *** | UNITED STATES | 0,7 | KG | 0.7 | 92,82 | View Importer |
06/Sep/2017 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR, for PCB mounting, TYPE POLUPROVODNIKA- gallium nitride, power dissipation 30W TRANSISTOR INTEGRA TECHNOLOGIES, INC. INTEGRA TECHNOLOGIES ILT2731M30 NO 330 | *** | UNITED STATES | 1,2 | KG | 1.2 | 71930,1 | View Importer |
13/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor, 1W power dissipation MORE: SEMICONDUCTOR BIPOLAR TRANSISTOR, gathered in a ceramic housing with three ports, TYPE SEMICONDUCTOR - silicon, power dissipation 4,5VT; NOT SCRAP ELECTRIC; TRAN | *** | UNITED STATES | 0,11 | KG | 0.11 | 16450 | View Importer |
06/Sep/2017 | 8541290000 | Power transistors for turbogenerator CAPSTONE. POWER TRANSISTOR insulated-gate bipolar transistor (INVERTER SKIIP2.2) converts the DC voltage into AC voltage. DS760V, AC230V. PART V AC / DC conversion. | *** | UNITED STATES | 6,9 | KG | 6.9 | 1953,54 | View Importer |
25/Sep/2017 | 8541290000 | Bipolar transistors SILICON TOUCH: power dissipation and NOMIN.NAPRYAZHENIE DC: MODEL IB1191 - 7 watts and 50 V intended for use in the equipment GRAZHD.PRIMENENIYA, Switching Power Amplifiers AIR CONTROL SYSTEM | *** | UNITED STATES | 5,3 | KG | 5.3 | 178500 | View Importer |
Our market research report and Russia export statistics of g g covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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