Russia G G Imports under HS Code 8542326900 from China

Lookup Russia g g imports under HS code 8542326900 from China. Search g g import data under HS code 8542326900 from China.

8542326900   China  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
04/Sep/2017 8542326900 ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH *** CHINA 0,8 KG 0.8 2661,88 View Importer
04/Sep/2017 8542326900 ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH *** CHINA 3,75 KG 3.75 168014,25 View Importer
04/Sep/2017 8542326900 ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH *** CHINA 7,55 KG 7.55 336118,14 View Importer
02/Sep/2017 8542326900 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage *** CHINA 0,02 *** 0.02 39,6 View Importer
02/Sep/2017 8542326900 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage *** CHINA 0,09 *** 0.09 90 View Importer
05/Sep/2017 8542326900 Electronic integrated circuits: flash memory (flash-ES PROM), 2 GB, voltage 3.6 V, current 30 mA, SAMSUNG ELECTRO-MECHANICS SAMSUNG ELECTRO-MECHANICS, KOREA, REPUBLIC OF SAMSUNG ELECTRO-MECHANICS, Korea, Republic of K9K8G08U0M-PIB0 MEMORY 20 *** CHINA 0,01 KG 0.01 174,35 View Importer
12/Sep/2017 8542326900 Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) assembled, with volume MEMORY 8 Gbit; NOT SCRAP: Electrical, *** CHINA 2,66 KG 2.66 11986,5 View Importer
27/Sep/2017 8542326900 IC chip electrically erasable permanent memory PEREPROGRAMIRUEMOY IC chip electrically erasable permanent memory PEREPROGRAMIRUEMOY container 2 Gbit MICRON TECHNOLOGY UNKNOWN UNKNOWN MTFC2GMVEA-0M WT MTFC2GMVEA-0M *** CHINA 0,01 KG 0.01 16 View Importer
27/Sep/2017 8542326900 Electronic integrated monolithic circuit intra-PROGRAMMABLE configuration memory PROM ES is approved for use in telecommunications equipment for PCB IC flash memory, memory capacity of 1 gigabit, ORGANIZATION *** CHINA 0,55 KG 0.55 456,98 View Importer
25/Sep/2017 8542326900 Electronic integrated monolithic circuit intra-PROGRAMMABLE configuration memory PROM ES is approved for use in telecommunications equipment for PCB IC flash memory, memory capacity 1 GB (256M * 4), tact *** CHINA 0,6 KG 0.6 2712,86 View Importer
26/Sep/2017 8542326900 FLASH MEMORY CHIPS 16 GB SUPPLY VOLTAGE 2.7-3.6 V Operating temperature -40 to +85 C MICRON LTD None None MT29F16G08ABACAWP-IT 2000 *** CHINA 2,31 KG 2.31 12980,8 View Importer
17/Sep/2017 8542326900 Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" chip. Integra. MONOLITH. Programmable, rewritable FLASH MEMORY SDI *** CHINA 0,01 KG 0.01 7,63 View Importer

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Our market research report and Russia export statistics of g g covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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