Lookup Russia g g imports under HS code 8542326900 from Taiwan China. Search g g import data under HS code 8542326900 from Taiwan China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
12/Nov/2017 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 2880 | PC | 7.29 | 79598,27 | View Importer |
27/Nov/2017 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 3840 | PC | 8.2 | 105927,68 | View Importer |
21/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 35000 | PC | 46.55 | 32200 | View Importer |
24/Nov/2017 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 19000 | PC | 25.27 | 17480 | View Importer |
08/Sep/2017 | 8542326900 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK MICRON MT29F16G08AJADAWP-IT: D B / | *** | TAIWAN CHINA | 0,12 | KG | 0.12 | 689,99 | View Importer |
07/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 5 | View Importer |
14/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | *** | KG | **** | 135 | View Importer |
14/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0,01 | KG | 0.01 | 5,5 | View Importer |
13/Sep/2017 | 8542326900 | Memory chip monolithic integrated electrically erasable programmable, memory type NAND FLASH, VOLUME 1 GB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 3,2 | KG | 3.2 | 7360 | View Importer |
15/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-electro | *** | TAIWAN CHINA | 33,62 | KG | 33.62 | 11875,8 | View Importer |
26/Sep/2017 | 8542326900 | ES FLASH EPROM (NAND FLASH) - CRYSTAL SILICON SEMICONDUCTOR MEMORY CAPACITY 128 Gbps, 2.7-3.6 V, the packaged used in the manufacture of chips for digital satellite receivers, ARE NOT FLASH EPROM ES (NAND FLASH) CROWBAR elect | *** | TAIWAN CHINA | 4,1 | KG | 4.1 | 15416,34 | View Importer |
29/Sep/2017 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB: MICRON WITHOUT TK B / M MT29F4G01ADAGDWB-IT: G B / M 2 | *** | TAIWAN CHINA | *** | KG | **** | 20,76 | View Importer |
30/Sep/2017 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0,02 | KG | 0.02 | 31,5 | View Importer |
20/Sep/2017 | 8542326900 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) F59L1G81MA-25TIG2Y, VOLUME 1 Gbit, 48-pin input voltage 2.7-3.6V, SIZE 20 * 12 * 1.2mm FOR PROM.SBORKI TV MODEL 1107 -002459 | *** | TAIWAN CHINA | 41 | KG | 41 | 18449,09 | View Importer |
Our market research report and Russia export statistics of g g covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
To get complete sunglass export statistics of Russia, simply fill the Request Demo Form. You can also drop your queries through info@exportgenius.in or +91-11-47048012.
Are you looking for Russia buyers or importers of g g