Russia G R Imports under HS Code 8541290000 from Japan

Lookup Russia g r imports under HS code 8541290000 from Japan. Search g r import data under HS code 8541290000 from Japan.

8541290000   Japan  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
09/Nov/2017 8541290000 TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. packed in SUMITOMO JAPAN 13 PC 0.241 4228,2 View Importer
30/Nov/2017 8541290000 TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. PROVIDED SUMITOMO JAPAN 2 PC 0.053 383,38 View Importer
12/Sep/2017 8541290000 Field-effect transistor with a controllable PN junction, for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. scatter *** JAPAN 0,06 KG 0.06 43,86 View Importer
12/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V *** JAPAN 0,01 KG 0.01 22,46 View Importer
12/Sep/2017 8541290000 MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. Calculated on the breakdown voltage of 20 V, *** JAPAN 0,01 KG 0.01 19,42 View Importer
21/Sep/2017 8541290000 Power FET SMD BASED gallium arsenide are intended for use in electronics PARTICULARLY IN bandpass amplifier, devices Radiocommunications - NOT A WASTE ELECTRICAL OR CROWBAR: VOLTAGE *** JAPAN 0,09 KG 0.09 1221,74 View Importer
27/Sep/2017 8541290000 TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. PACKED IN: OCHO *** JAPAN 3,03 KG 3.03 19460,34 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A *** JAPAN 0,28 KG 0.28 6,28 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 *** JAPAN 0,4 KG 0.4 9,12 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.5 V *** JAPAN 1,74 KG 1.74 39,29 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.25 *** JAPAN 0,59 KG 0.59 13,4 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 *** JAPAN 0,05 KG 0.05 1,08 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, *** JAPAN 0,21 KG 0.21 4,79 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 4.2 A *** JAPAN 0,11 KG 0.11 2,43 View Importer
16/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A *** JAPAN 0,15 KG 0.15 3,46 View Importer

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Our market research report and Russia export statistics of g r covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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