Lookup Russia g r imports under HS code 8541290000 from Taiwan China. Search g r import data under HS code 8541290000 from Taiwan China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
04/Sep/2017 | 8541290000 | MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, PD - power dissipation of 150 W, RISE TIME: 15 NS, SERIES: IXTA3N120. Used in various schemes for TV, audio, video and radio broadcasting, MOBILE DEVICES: COMMUNICATION / | *** | TAIWAN CHINA | 0,1 | KG | 0.1 | 187,08 | View Importer |
04/Sep/2017 | 8541290000 | MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, Resistance Drain-26 MOHMS, power dissipation: 1.79 W. used in various schemes for TV, audio, video and broadcasting, in device CELLULAR / NOT FOR: Consumer | *** | TAIWAN CHINA | *** | KG | **** | 8,96 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | TAIWAN CHINA | 0,07 | KG | 0.07 | 1,52 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | TAIWAN CHINA | 0,25 | KG | 0.25 | 5,62 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 6.25 | *** | TAIWAN CHINA | 3,06 | KG | 3.06 | 69,63 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 13,46 | KG | 13.46 | 397,33 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 8,87 | KG | 8.87 | 198,6 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 | *** | TAIWAN CHINA | 9,74 | KG | 9.74 | 318,06 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | TAIWAN CHINA | 15,18 | KG | 15.18 | 340,16 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 | *** | TAIWAN CHINA | 27,36 | KG | 27.36 | 613 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NP-CHANNEL, power dissipation 1.1 | *** | TAIWAN CHINA | 1,39 | KG | 1.39 | 31,42 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 0,19 | KG | 0.19 | 4,23 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 1.6 V | *** | TAIWAN CHINA | 0,05 | KG | 0.05 | 1,15 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 | *** | TAIWAN CHINA | 0,07 | KG | 0.07 | 1,54 | View Importer |
07/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 98 A, | *** | TAIWAN CHINA | 0,03 | KG | 0.03 | 0,68 | View Importer |
Our market research report and Russia export statistics of g r covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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