Russia G R Imports under HS Code 8542323900 from Taiwan China

Lookup Russia g r imports under HS code 8542323900 from Taiwan China. Search g r import data under HS code 8542323900 from Taiwan China.

8542323900   Taiwan China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
28/Nov/2017 8542323900 Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: memory modules for notebooks, AND ARE NOT encryption (cryptographic) DEVICES ARE FREE MODULE ENCRYPTION KINGSTON TAIWAN CHINA 850 PC 28.8 54597,14 View Importer
01/Sep/2017 8542323900 Dynamic random access memory (DRAM DDR3) SEMICONDUCTOR SILICON CRYSTALS MEMORY MEMORY 2 GB, 1.5 V, positioned at the adhesive carrier plate diameter of 300 mm uncut crystallized: USED IN THE PRODUCTION OF MICRO *** TAIWAN CHINA 0,75 *** 0.75 16014,36 View Importer
05/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 DIMM 1600 MHz (PC3-12800) 240-PIN NON-ECC, reservoirs 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR PERMANENT 1.5 CURRENT is used in industry COM *** TAIWAN CHINA 0,05 KG 0.05 91,01 View Importer
12/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), Capacity 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR 1.5 VDC , used in industry Compute *** TAIWAN CHINA 2,4 KG 2.4 5850,48 View Importer
14/Sep/2017 8542323900 Dynamic random access memory, for use in telecommunications equipment for surface mounting on printed circuit boards IC Synchronous Dynamic Random Access Memory DDR2 (SDRAM), memory 1 Gb (64M * 16), and *** TAIWAN CHINA 0,06 KG 0.06 56,8 View Importer
05/Sep/2017 8542323900 Electronic integrated circuits, MODEL "EDB8132B4PB-8D-F" - 17 PCS. The product is a synchronous dynamic random access memory of 8 GB and operating frequency to 400MHz. Operating voltage up to 1.8 V.: formed as an integrated MES *** TAIWAN CHINA 0,52 KG 0.52 198,56 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1066 204-PIN (PC3-8500), capacitance 4 GB 2 X (256 MB X 8) VOLTAGE POWER 1.5 VDC, is used Industrial Computers In QUALITY *** TAIWAN CHINA 0,14 KG 0.14 99,03 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR4 SO-DIMM 2133 MHz 260-PIN (PC4-17000), 4 GB Capacity (MB 512 X 8) VOLTAGE POWER 1.2 VDC, COMPUTERS IN THE INDUSTRIAL USE AS *** TAIWAN CHINA 0,48 KG 0.48 510,09 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR 1600 MHz DDR3 DIMM 240-PIN (PC3-12800), Capacity 8 GB 2 X (512 MB X 8) VOLTAGE POWER 1.5 VDC, COMPUTERS IN THE INDUSTRIAL USE AS *** TAIWAN CHINA 0,96 KG 0.96 1580,17 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN, reservoirs 4 GB (512 MB X 8) VOLTAGE 1.5 V / 1.35 V DC, used in industrial computer as OPERA *** TAIWAN CHINA 0,05 KG 0.05 44,01 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), Capacity 8 GB 2 X (512 MB X 8) VOLTAGE POWER 1.5 VDC, is used Industrial Computers In KACHES *** TAIWAN CHINA 0,48 KG 0.48 790,09 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), capacitance 4 GB 2 X (256 MB X 8) VOLTAGE OR 1.5 1.35 VDC , used in industry Compute *** TAIWAN CHINA 1,92 KG 1.92 1680,34 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 DIMM 1600 MHz (PC3-12800) 240-PIN NON-ECC, reservoirs 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR PERMANENT 1.5 CURRENT is used in industry COM *** TAIWAN CHINA 0,29 KG 0.29 546,05 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR 1600 MHz DDR3 DIMM 240-PIN (PC3-12800), capacitance 4 GB 2 X (256 MB X 8) VOLTAGE POWER 1.5 VDC, COMPUTERS IN THE INDUSTRIAL USE AS *** TAIWAN CHINA 1,92 KG 1.92 1760,34 View Importer
27/Sep/2017 8542323900 Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), capacitance 4 GB 2 X (8 X 256 MB) 1.35 VOLTAGE OR 1.5 VDC , used in industry Compute *** TAIWAN CHINA 0,96 KG 0.96 1060,17 View Importer

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Our market research report and Russia export statistics of g r covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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