Lookup Russia h s imports under HS code 8541290000 from Malaysia. Search h s import data under HS code 8541290000 from Malaysia.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
14/Sep/2017 | 8541290000 | Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE | *** | MALAYSIA | 41,5 | KG | 41.5 | 11097,73 | View Importer |
14/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on a printed circuit board, not creating disturbing electromagnetic field: a power module, which is a transistor half-bridge, designed for use in telecommunication equ | *** | MALAYSIA | 66,3 | KG | 66.3 | 13618,38 | View Importer |
14/Sep/2017 | 8541290000 | FETs high electron mobility (HEMT), C dissipation of 20 W, 6 TSR. (NOT SCRAP ELECTRIC) APPLICATION: CONSTRUCTION electronic equipment for PCB mounting. With the dissipation of 6 watt POWER PAC | *** | MALAYSIA | 2,5 | KG | 2.5 | 45360 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,02 | KG | 0.02 | 23,62 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | *** | KG | **** | 8,45 | View Importer |
06/Sep/2017 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0,04 | KG | 0.04 | 96,02 | View Importer |
09/Sep/2017 | 8541290000 | Transistors, power dissipation 79 W for the production of cash-handling equipment, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / INFINEON TECHNOLOGIES INFINEON TECHN | *** | MALAYSIA | 2,8 | KG | 2.8 | 1271,5 | View Importer |
06/Sep/2017 | 8541290000 | SINGLE TRANSISTOR 1W power dissipation MORE, NOT A high-frequency used in instruments Industrial electronics: ART.BD13816STU-961SHT (MOSCHN.8VT); : FAIRCHILD SEMICONDUCTOR NO FSC 0 | *** | MALAYSIA | 1,5 | KG | 1.5 | 129,1 | View Importer |
27/Sep/2017 | 8541290000 | MODULES insulated-gate bipolar transistor (IGBT), DISPERSION OVER POWER 1W. (NO ELECTRICAL SCRAP): power exceeding 10 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N DZ800S17K3 B / H 160 | *** | MALAYSIA | 57,89 | KG | 57.89 | 13036,98 | View Importer |
27/Sep/2017 | 8541290000 | Transistors with power dissipation MORE 1W. (NO ELECTRICAL SCRAP): SCATTERING POWER 2 W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7341PBF B / H 190 | *** | MALAYSIA | 0,03 | KG | 0.03 | 52,99 | View Importer |
27/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MODULES insulated-gate bipolar transistor (IGBT), the power dissipation 1600W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N FF300R12ME4_B11 B / 3 H | *** | MALAYSIA | 1,04 | KG | 1.04 | 328,01 | View Importer |
18/Sep/2017 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 45W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET POWER scattering | *** | MALAYSIA | 2 | KG | 2 | 477,69 | View Importer |
18/Sep/2017 | 8541290000 | FET power dissipation 45W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. 2SK3569 - 1200SHT. : TOSHIBA TOSHIBA 0 | *** | MALAYSIA | 2 | KG | 2 | 332,14 | View Importer |
18/Sep/2017 | 8541290000 | Bipolar transistor power dissipation 20W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. 2SA1837 - 1000 pcs. : TOSHIBA TOSHIBA 0 | *** | MALAYSIA | 1 | KG | 1 | 157,07 | View Importer |
18/Sep/2017 | 8541290000 | Bipolar transistor power dissipation 167VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO247, ART. HGTG5N120BND - 400SHT. : FAIRCHILD SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR 0 | *** | MALAYSIA | 2 | KG | 2 | 394,14 | View Importer |
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