Check Russia import data of h s under HS code 8542323100. Get import data of Russia for HS code 8542323100
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
10/Nov/2017 | 8542323100 | Microcircuits integrated, monolithic, Memory, DRAM, memory 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | WINBOND ELECTRONICS | TAIWAN CHINA | 1672 | PC | 1.64 | 1255,4 | View Importer |
18/Nov/2017 | 8542323100 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) W9751G6KB-15 512MBIT 84 PINA, 1.7-1.9V SUPPLY VOLTAGE FOR MONITOR PROM.SBORKI LU28E590DS / RU, HAS encryption function / CRYPTOGRAPHY, PACKAGING (1-SPOOL 0 | WINBOND ELECTRONICS | TAIWAN CHINA | 1672 | PC | 2.33 | 1219,61 | View Importer |
02/Nov/2017 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE. | MICRON TECHNOLOGY, INC | *** | 330 | PC | 0.221 | 1913,73 | View Importer |
09/Nov/2017 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE. | MICRON TECHNOLOGY, INC | *** | 20 | PC | 0.23 | 121,58 | View Importer |
19/Nov/2017 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE. | MICRON TECHNOLOGY, INC | *** | 500 | PC | 0.274 | 915,75 | View Importer |
30/Nov/2017 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE. | MICRON TECHNOLOGY, INC | *** | 200 | PC | 0.058 | 665,44 | View Importer |
03/Nov/2017 | 8542323100 | Integrated circuits, monolithic, have no function encryption (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. Memory Size 128 MBIT. APPLICATION: CONSTRUCTION RADIOELECTRONIC | ABSENT | *** | 432 | PC | 0.235 | 1134 | View Importer |
07/Nov/2017 | 8542323100 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. MEMORY SIZE 512 MBIT. APPLICATION: BUILDING | ABSENT | *** | 10 | PC | 0.01 | 57,75 | View Importer |
07/Sep/2017 | 8542323100 | Dynamic random access memory, for use in telecommunications equipment EC for surface mounting on printed circuit boards, unrecorded, does not have the encryption function (CRYPTOGRAPHY) is not CROWBAR ELECT | *** | TAIWAN CHINA | 3,02 | KG | 3.02 | 1576,8 | View Importer |
01/Sep/2017 | 8542323100 | The storage device of electronic integrated: dynamic random access memory device comprising 64MBT MEMORY is a circuit electronic integrated monolithic SDRAM MEMORY CHIPS, The plastic housing With 90 VYVODAMI.NA ON | *** | CHINA | 1,95 | *** | 1.95 | 895,74 | View Importer |
13/Sep/2017 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. DRAM ZAPOM | *** | INDONESIA | 0,26 | KG | 0.26 | 120,13 | View Importer |
12/Sep/2017 | 8542323100 | Integrated circuits, monolithic, have no function encryption (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. MEMORY SIZE 64 MBIT. APPLICATION: CONSTRUCTION RADIOELECTRONIC: Equips | *** | CHINA | 2,15 | KG | 2.15 | 7468,52 | View Importer |
13/Sep/2017 | 8542323100 | Diagram of an electronic, integrated, dynamic random access memory, with a storage capacity to 512 Mbit NOT combined with other schemes that do not have the encryption function is used for mounting and repair of household electronic Appar: MIC | *** | CHINA | 0,1 | KG | 0.1 | 109,67 | View Importer |
20/Sep/2017 | 8542323100 | Dynamic random access memory (DRAM), is an electronic integrated circuit having a function of storing information, with a storage capacity of 256 MBIT, 3.3 V, for personal computers: MICRON TECHNOLOGY INC. MICRON | *** | TAIWAN CHINA | 2,59 | KG | 2.59 | 3145,82 | View Importer |
20/Sep/2017 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity of 512 Mbit USED IN ELECTRONIC CONTROL SYSTEMS WASHING MACHINES CHIP CONTROL BOARD / WASH SW MCB EC - HW MCB EC V3 ALLIANCE LAUNDRY CE SRO, TAIWAN (CHINA) ALCOM SW HW | *** | FRANCE | 0,1 | KG | 0.1 | 82,48 | View Importer |
Our market research report and Russia export statistics of h s covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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