Lookup Russia h s imports under HS code 8542326100 from China. Search h s import data under HS code 8542326100 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
07/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND | CHINA | 28800 | PC | 18 | 3339,85 | View Importer |
14/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND | CHINA | 14400 | PC | 10.56 | 1695,68 | View Importer |
16/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH-ES EEPROM memory 4 Mbit do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TVS "SAMSUNG" | WINBOND NO.8.KEYA | CHINA | 36000 | PC | 26.4 | 3703,93 | View Importer |
16/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory 16 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TVS "SAMSUNG" | GIGADEVICE SEMICONDUCTOR (HK) LIMITED | CHINA | 39000 | PC | 5.07 | 3240,04 | View Importer |
23/Nov/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY NOT MORE 512MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND | CHINA | 9600 | PC | 7.04 | 1026,13 | View Importer |
01/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H | *** | CHINA | *** | *** | **** | 193,49 | View Importer |
05/Sep/2017 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT: MICROCHIP, Integrated circuits, monolithic FLASH EPROM ES, HAS encryption function (CRYPTOGRAPHY) radiation-NOT NOT ELECTRICAL JOM, ADESTO TECHNOLOGIES ADESTO ADESTO AT45DB081E-SSHN2B | *** | CHINA | *** | KG | **** | 21,97 | View Importer |
08/Sep/2017 | 8542326100 | FLASH EPROM ES with a storage capacity not BOL. 512 MBIT: MEMORY CARD COMPACTFLASH, VOLUME 128MB, for use in systems for industrial automation OMRON CORPORATION OMRON HMC-EF183 HMC-EF183 HMC-EF183 10 | *** | CHINA | 0,09 | KG | 0.09 | 418,9 | View Importer |
03/Sep/2017 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0,97 | *** | 0.97 | 3005,43 | View Importer |
03/Sep/2017 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0,94 | *** | 0.94 | 1002,65 | View Importer |
03/Sep/2017 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0,56 | *** | 0.56 | 1507,17 | View Importer |
03/Sep/2017 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0,12 | *** | 0.12 | 371,78 | View Importer |
01/Sep/2017 | 8542326100 | Integrated circuits, monolithic, MEMORY, FLASH-PROM ES, NOT MORE MEMORY 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PEREZAPISYVAEMAYA FLASH EEPROM MEMORY 100KB D / Cond | *** | CHINA | 0,01 | *** | 0.01 | 7,93 | View Importer |
01/Sep/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory 16 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PROGRAMMIRUEMAYA FLASH MEMORY 20KB EEPROM 24C15 D / KO | *** | CHINA | *** | *** | **** | 1,32 | View Importer |
01/Sep/2017 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH-ES EEPROM memory 4 Mbit do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT | *** | CHINA | 3,51 | *** | 3.51 | 2241,99 | View Importer |
Our market research report and Russia export statistics of h s covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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