Lookup Russia h s imports under HS code 8542326900 from China. Search h s import data under HS code 8542326900 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
04/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 0,8 | KG | 0.8 | 2661,88 | View Importer |
04/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 3,75 | KG | 3.75 | 168014,25 | View Importer |
04/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 7,55 | KG | 7.55 | 336118,14 | View Importer |
01/Sep/2017 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8192MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0,01 | *** | 0.01 | 101,68 | View Importer |
03/Sep/2017 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory DEVICE | *** | CHINA | 1,02 | *** | 1.02 | 2807,42 | View Importer |
11/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0,01 | KG | 0.01 | 9,61 | View Importer |
11/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0,01 | KG | 0.01 | 10,87 | View Importer |
11/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE MEMORY FLASH EEPROM AR12JSFSM | *** | CHINA | *** | KG | **** | 18,2 | View Importer |
27/Sep/2017 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 1024MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0,48 | KG | 0.48 | 193,2 | View Importer |
29/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PROGRAMMIRUEMAYA FLASH EEPROM MEMORY 20KB 24C20 D / KO | *** | CHINA | *** | KG | **** | 1,33 | View Importer |
29/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE MEMORY FLASH EEPROM AR12KSFH | *** | CHINA | 0,05 | KG | 0.05 | 27,45 | View Importer |
29/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory over 512 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PROGRAMMIRUEMAYA FLASH MEMORY 20KB EEPROM 24C | *** | CHINA | 0,02 | KG | 0.02 | 13,18 | View Importer |
29/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE MEMORY FLASH EEPROM AR09MSFP | *** | CHINA | 0,09 | KG | 0.09 | 46,36 | View Importer |
17/Sep/2017 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" chip. Integra. MONOLITH. Programmable, rewritable FLASH MEMORY SDI | *** | CHINA | 0,01 | KG | 0.01 | 7,63 | View Importer |
Our market research report and Russia export statistics of h s covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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