Russia H T Imports under HS Code 8541290000 from Malaysia

Lookup Russia h t imports under HS code 8541290000 from Malaysia. Search h t import data under HS code 8541290000 from Malaysia.

8541290000   Malaysia  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
14/Sep/2017 8541290000 Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE *** MALAYSIA 41,5 KG 41.5 11097,73 View Importer
14/Sep/2017 8541290000 SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on a printed circuit board, not creating disturbing electromagnetic field: a power module, which is a transistor half-bridge, designed for use in telecommunication equ *** MALAYSIA 66,3 KG 66.3 13618,38 View Importer
14/Sep/2017 8541290000 FETs high electron mobility (HEMT), C dissipation of 20 W, 6 TSR. (NOT SCRAP ELECTRIC) APPLICATION: CONSTRUCTION electronic equipment for PCB mounting. With the dissipation of 6 watt POWER PAC *** MALAYSIA 2,5 KG 2.5 45360 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA 0,02 KG 0.02 23,62 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA *** KG **** 8,45 View Importer
06/Sep/2017 8541290000 MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC *** MALAYSIA 0,04 KG 0.04 96,02 View Importer
09/Sep/2017 8541290000 Transistors, power dissipation 79 W for the production of cash-handling equipment, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / INFINEON TECHNOLOGIES INFINEON TECHN *** MALAYSIA 2,8 KG 2.8 1271,5 View Importer
06/Sep/2017 8541290000 SINGLE TRANSISTOR 1W power dissipation MORE, NOT A high-frequency used in instruments Industrial electronics: ART.BD13816STU-961SHT (MOSCHN.8VT); : FAIRCHILD SEMICONDUCTOR NO FSC 0 *** MALAYSIA 1,5 KG 1.5 129,1 View Importer
27/Sep/2017 8541290000 MODULES insulated-gate bipolar transistor (IGBT), DISPERSION OVER POWER 1W. (NO ELECTRICAL SCRAP): power exceeding 10 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N DZ800S17K3 B / H 160 *** MALAYSIA 57,89 KG 57.89 13036,98 View Importer
27/Sep/2017 8541290000 Transistors with power dissipation MORE 1W. (NO ELECTRICAL SCRAP): SCATTERING POWER 2 W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7341PBF B / H 190 *** MALAYSIA 0,03 KG 0.03 52,99 View Importer
27/Sep/2017 8541290000 Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MODULES insulated-gate bipolar transistor (IGBT), the power dissipation 1600W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N FF300R12ME4_B11 B / 3 H *** MALAYSIA 1,04 KG 1.04 328,01 View Importer
18/Sep/2017 8541290000 A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 45W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET POWER scattering *** MALAYSIA 2 KG 2 477,69 View Importer
18/Sep/2017 8541290000 FET power dissipation 45W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. 2SK3569 - 1200SHT. : TOSHIBA TOSHIBA 0 *** MALAYSIA 2 KG 2 332,14 View Importer
18/Sep/2017 8541290000 Bipolar transistor power dissipation 20W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. 2SA1837 - 1000 pcs. : TOSHIBA TOSHIBA 0 *** MALAYSIA 1 KG 1 157,07 View Importer
18/Sep/2017 8541290000 Bipolar transistor power dissipation 167VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO247, ART. HGTG5N120BND - 400SHT. : FAIRCHILD SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR 0 *** MALAYSIA 2 KG 2 394,14 View Importer

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Our market research report and Russia export statistics of h t covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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