Lookup Russia l l imports under HS code 8541290000 from China. Search l l import data under HS code 8541290000 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
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03/Nov/2017 | 8541290000 | Transistors, solid-state, power dissipation 5 W, SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" | ALPHA & OMEGA SEMICONDUCTOR (HONG KONG) LTD | CHINA | 33000 | PC | 0.39 | 677,29 | View Importer |
10/Nov/2017 | 8541290000 | Transistors, solid-state, power dissipation 1 W, SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" | DIODES LIMITED | CHINA | 20000 | PC | 3.42 | 372,85 | View Importer |
20/Nov/2017 | 8541290000 | Transistors, solid-state, power dissipation 1 W, JOM elect. NOT FOR ZHEL.-DOROZH.TRANSPORTA NOT RADIATION SYSTEM, NOT MEDICAL NAZNACHENICHYA, civil applications, for industrial assembly TECHNOLOGY "SAMSUNG" | SUPER VICTORY ENTERPRISES LIMITED. | CHINA | 40000 | PC | 0.477 | 611,35 | View Importer |
23/Nov/2017 | 8541290000 | Transistors, solid-state, power dissipation 1.25 W, SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" | ALPHA & OMEGA SEMICONDUCTOR (HONG KONG) LTD | CHINA | 42500 | PC | 13.4 | 2239,83 | View Importer |
14/Nov/2017 | 8541290000 | Transistors with a dissipation of less than 1W NOT (FOR REPAIR Welding machines) | JUBA | CHINA | 200 | PC | 10 | 131,84 | View Importer |
29/Nov/2017 | 8541290000 | TRAHZISTORY is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric TSEPYAH.NE ARE photoresistor. | JOTRIN ELECTRONICS | CHINA | 8000 | PC | 21.94 | 2428,88 | View Importer |
09/Nov/2017 | 8541290000 | Transistors TYPE SEMICONDUCTOR SILICON, power dissipation of 70 W, in the radiation-PERFORMANCE FOR Power supplies for LED. Operating Temperature 0 to 40 degrees Celsius. | ABSENT | CHINA | 10000 | PC | 28 | 6571 | View Importer |
17/Nov/2017 | 8541290000 | Transistors TYPE SEMICONDUCTOR SILICON, power dissipation of 32 W, in the radiation-PERFORMANCE FOR Power supplies for LED. Operating Temperature 0 to 40 degrees Celsius. | ABSENT | CHINA | 6000 | PC | 12.3 | 4320 | View Importer |
15/Sep/2017 | 8541290000 | TRAHZISTORY is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric TSEPYAH.NE ARE photoresistor. : TYPE SEMICONDUCTOR-3-X KANALNYY.MOSCHN | *** | CHINA | 0,8 | KG | 0.8 | 519,17 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 380 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON AUIRFS3004-7P B / H 100 | *** | CHINA | 0,59 | KG | 0.59 | 246,36 | View Importer |
07/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 130 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON IRFP054NPBF B / H 250 | *** | CHINA | 1,48 | KG | 1.48 | 187,25 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H | *** | CHINA | 0,06 | KG | 0.06 | 21,75 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 29 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N IRF7313TRPBF B / 12 H | *** | CHINA | 0,02 | KG | 0.02 | 12,13 | View Importer |
13/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H | *** | CHINA | 0,07 | KG | 0.07 | 32,37 | View Importer |
05/Sep/2017 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1,28 | KG | 1.28 | 754,38 | View Importer |
Our market research report and Russia export statistics of l l covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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