Lookup Russia l l imports under HS code 8541290000 from United States. Search l l import data under HS code 8541290000 from United States.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
04/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, Transis | *** | UNITED STATES | 26,2 | KG | 26.2 | 7215,75 | View Importer |
13/Sep/2017 | 8541290000 | FET TRANSISTOR IRG4BC30WPBF manufactured by INFINEON IS insulated-gate bipolar transistor. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level. It has a high | *** | UNITED STATES | 0,14 | KG | 0.14 | 176,5 | View Importer |
13/Sep/2017 | 8541290000 | FET TRANSISTOR BC846AMTF PRODUCED BY FAIRCHILD IS A bipolar transistor - BJT. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Apply with automated processing of data, portable communication TP | *** | UNITED STATES | 8,22 | KG | 8.22 | 3447,48 | View Importer |
13/Sep/2017 | 8541290000 | FET TRANSISTOR PD55003-E STMICROELECTRONICS PRODUCTION COMPANY IS RF MOSFETs. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Used in network switches, valves. Transistor Polarity: N-CHANNEL. ID | *** | UNITED STATES | 1,94 | KG | 1.94 | 13068 | View Importer |
05/Sep/2017 | 8541290000 | Transistor: IRF7506TRPBF TRANSISTOR MANUFACTURING COMPANY INTERNATIONAL RECTIFIER IS MOSFET. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level and reliability Transistor | *** | UNITED STATES | 0,03 | KG | 0.03 | 299 | View Importer |
05/Sep/2017 | 8541290000 | FET TRANSISTORS U431 PRODUCED BY VISHAY is a multifunctional bipolar transistors. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Apply with automated processing of data, PORTABLE TELECOMMUNICATIONS | *** | UNITED STATES | 0,31 | KG | 0.31 | 8650,7 | View Importer |
05/Sep/2017 | 8541290000 | Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300 | *** | UNITED STATES | 0,05 | KG | 0.05 | 650,64 | View Importer |
12/Sep/2017 | 8541290000 | Transistors, phototransistor NOT BLOCK transistor (6 pieces), soldered together, the VLT FOR FREQUENCY CONVERTERS, COMPLETE WITH FIXING,, DANFOSS LLC DANFOSS IGBT 176F8628 IGBT 2 | *** | UNITED STATES | 2,5 | KG | 2.5 | 618,96 | View Importer |
05/Sep/2017 | 8541290000 | Transistors, phototransistors NO: MODULE Transistor (two transistors in one case) FOR SWITCHING CONVERTERS LOAD FREQUENCY CURRENTS VLT, in KOMPLEKTK with fasteners, CURRENT 600 A, MODULE FOR SWITCHING TRANSISTOR LOAD CURRENT TRANSDUCERS H | *** | UNITED STATES | 5,03 | KG | 5.03 | 824,61 | View Importer |
12/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation BT 878: MOSFET 960 W power dissipation IXYS CORPORATION WITHOUT TRADEMARK B / H B IXTK90N25L2 / H 2 INFINEON / IR without commodity | *** | UNITED STATES | 0,05 | KG | 0.05 | 38,54 | View Importer |
12/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 44,5 VT MOSFET power dissipation 55W MOSFET power dissipation 60W MOSFET power dissipation of 20 | *** | UNITED STATES | 0,24 | KG | 0.24 | 121,49 | View Importer |
12/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) bipolar transistors, power dissipation 3 W DIODES INCORPORATED WITHOUT TRADEMARK B / N ZX5T951GTA B / 10 H | *** | UNITED STATES | 0,01 | KG | 0.01 | 5,49 | View Importer |
12/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NOT SCRAP ELECTRIC) MOSFET power dissipation 1 W INFINEON / IR WITHOUT A TRADEMARK B / N AUIRFL024NTR B / N 526 | *** | UNITED STATES | 0,53 | KG | 0.53 | 241,2 | View Importer |
10/Sep/2017 | 8541290000 | Semiconductor devices: transistors, for PCB mounting: TOSHIBA CORP TOSHIBA TOSHIBA TPC8125, LQ (S 2500 ZETEX SEMICONDUCTORS PLC ZTX ZTX ZXMP10A18KTC 2500 ON SEMICONDUCTOR CORP ONSEMI ONSEMI MMUN2111LT1G 27000. | *** | UNITED STATES | 2,58 | KG | 2.58 | 1759,8 | View Importer |
27/Sep/2017 | 8541290000 | Transistors. NOT SCRAP ELECTRIC. NO leaky line. It does not contain MODULE encryption and cryptography. DTA114EUA TRANSISTOR 2W, 10V / 2W power transistor, 10B. DTC114EUA TRANSISTOR 2W, 40V / 2W power transistor, TO 40V. DTA144EUA | *** | UNITED STATES | 0,32 | KG | 0.32 | 567,05 | View Importer |
Our market research report and Russia export statistics of l l covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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