Lookup Russia w d imports under HS code 8541290000 from Malaysia. Search w d import data under HS code 8541290000 from Malaysia.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
15/Nov/2017 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON | FUJI ELECTRIC | MALAYSIA | 452 | PC | 184.8 | 35648,85 | View Importer |
14/Sep/2017 | 8541290000 | Modules insulated-gate bipolar transistor (IGBT) "FF600R12ME4" With powerful. DISPERSION 4050 W, collector-emitter voltage 1200V, gate-emitter voltage 20V. TYPE SEMICONDUCTOR SILICON. : INTENDED FOR USE IN HIGH POWER PRE | *** | MALAYSIA | 41,5 | KG | 41.5 | 11097,73 | View Importer |
02/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 34 A, | *** | MALAYSIA | 1,62 | *** | 1.62 | 1512 | View Importer |
06/Sep/2017 | 8541290000 | Spare parts for REMONTA- semiconductor transistor: / NOT SCRAP / / NOT WASTE / NOT FOR EQUIPMENT. WORKS. In potentially explosive atmospheres / / NOT FOR VEHICLES / NOT MILITARY / / NOT DUAL-USE / semiconductor transistor power dissipation of 10 W, | *** | MALAYSIA | 0,05 | KG | 0.05 | 45,73 | View Importer |
14/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on a printed circuit board, not creating disturbing electromagnetic field: a power module, which is a transistor half-bridge, designed for use in telecommunication equ | *** | MALAYSIA | 66,3 | KG | 66.3 | 13618,38 | View Importer |
12/Sep/2017 | 8541290000 | TRANSISTOR DESIGNED FOR USE IN telecommunications equipment for mounting on circuit boards P-channel MOS KEY maximum constant drain-source voltage 12V, the maximum drain current is 16A, the power of 2.5 W, SOIC-8 BODY TEMPERATURE RANGE - | *** | MALAYSIA | 2,17 | KG | 2.17 | 5460,82 | View Importer |
14/Sep/2017 | 8541290000 | FETs high electron mobility (HEMT), C dissipation of 20 W, 6 TSR. (NOT SCRAP ELECTRIC) APPLICATION: CONSTRUCTION electronic equipment for PCB mounting. With the dissipation of 6 watt POWER PAC | *** | MALAYSIA | 2,5 | KG | 2.5 | 45360 | View Importer |
09/Sep/2017 | 8541290000 | Transistors, power dissipation 2.5W, LED screen, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / FAIRCHILD SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR FD | *** | MALAYSIA | 0,6 | KG | 0.6 | 3078 | View Importer |
09/Sep/2017 | 8541290000 | Transistors, power dissipation 79 W for the production of cash-handling equipment, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / INFINEON TECHNOLOGIES INFINEON TECHN | *** | MALAYSIA | 2,8 | KG | 2.8 | 1271,5 | View Importer |
08/Sep/2017 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI | *** | MALAYSIA | 9,56 | KG | 9.56 | 844,33 | View Importer |
27/Sep/2017 | 8541290000 | MODULES insulated-gate bipolar transistor (IGBT), DISPERSION OVER POWER 1W. (NO ELECTRICAL SCRAP): power exceeding 10 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N DZ800S17K3 B / H 160 | *** | MALAYSIA | 57,89 | KG | 57.89 | 13036,98 | View Importer |
27/Sep/2017 | 8541290000 | Transistors with power dissipation MORE 1W. (NO ELECTRICAL SCRAP): SCATTERING POWER 2 W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7341PBF B / H 190 | *** | MALAYSIA | 0,03 | KG | 0.03 | 52,99 | View Importer |
28/Sep/2017 | 8541290000 | COMPONENTS FOR INSTALLATION UNITS industrial, consumer: TRANSISTOR SEMICONDUCTOR FIELD FOR PCB mounting. Drain voltage - SOURCE: 400 volts. Current: 4 A Power Dissipation: 42 Tues. WORKING RANGE TEMEPERATUR: -55 ° C | *** | MALAYSIA | 0,98 | KG | 0.98 | 490,1 | View Importer |
16/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on a printed circuit board, not creating disturbing electromagnetic field: bipolar transistors for use in telecommunications equipment, rated at K | *** | MALAYSIA | *** | KG | **** | 56,42 | View Importer |
27/Sep/2017 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MODULES insulated-gate bipolar transistor (IGBT), the power dissipation 1600W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N FF300R12ME4_B11 B / 3 H | *** | MALAYSIA | 1,04 | KG | 1.04 | 328,01 | View Importer |
Our market research report and Russia export statistics of w d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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