Russia W D Imports under HS Code 8542323900 from China

Lookup Russia w d imports under HS code 8542323900 from China. Search w d import data under HS code 8542323900 from China.

8542323900   China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
20/Nov/2017 8542323900 Dynamic random access memory (DRAM), with a storage capacity more than 512 is not recorded, NOT JOM ELECTRICAL: SAMSUNG CHINA 5 PC 0.068 185,5 View Importer
20/Nov/2017 8542323900 Dynamic random access memory (DRAM), with a storage capacity more than 512 is not recorded, NOT JOM ELECTRICAL: SAMSUNG CHINA 5 PC 0.064 169,5 View Importer
20/Nov/2017 8542323900 Dynamic random access memory (DRAM), with a storage capacity more than 512 is not recorded, NOT JOM ELECTRICAL: SAMSUNG CHINA 1 PC 0.016 61 View Importer
06/Sep/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, MEMORY 4Gbit: MICRON MICRON MT41K256M16TW-107 AIT: P MT41K256M16TW-107 A *** CHINA 0,09 KG 0.09 73,39 View Importer
12/Sep/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, memory 4 HBT: MICRON MICRON EDB4432BBPA-1D-FR EDB4432BBPA-1D-FR EDB44 *** CHINA 4 KG 4 5094,59 View Importer
02/Sep/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB, a maximum frequency of 12 *** CHINA 0,11 *** 0.11 149,6 View Importer
02/Sep/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity to 16 GB, the maximum operating frequency of 6 *** CHINA 0,76 *** 0.76 2362,5 View Importer
02/Sep/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, a maximum frequency of 40 *** CHINA 0,06 *** 0.06 231 View Importer
02/Sep/2017 8542323900 MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, maximum operating frequency of 13 *** CHINA 0,01 *** 0.01 18 View Importer
02/Sep/2017 8542323900 Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: EL.MODUL of RAM 4GB DDR3, is designed to accelerate data exchange with computers, 4 GB and runs at 1866 MHz (COMPLETE WITH A SERVICE *** CHINA 0,16 *** 0.16 78,81 View Importer
15/Sep/2017 8542323900 Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT: EL.MODUL of RAM 4GB DDR3, INTENDED FOR ACCELERATION COMMUNICATION In the computer 4 GB and run at 1866 MHz (COMPLETE WITH SERVICE LI *** CHINA 0,16 KG 0.16 78,81 View Importer
08/Sep/2017 8542323900 Dynamic random access memory (DRAM) with a storage capacity greater than 512 Mbit encryption (cryptographic) facilities and elements are missing are not intended for secretly obtaining and recording: main memory capacity: *** CHINA 0,19 KG 0.19 261,74 View Importer
08/Sep/2017 8542323900 Dynamic random access memory (DRAM) without the encryption function (CRYPTOGRAPHY): MAP RAM for MFP BIZHUB 227/287/367 FOR 2 GB, of DDR3, the effective frequency of 1333 MHz, 1.5V SUPPLY VOLTAGE KONICA MINOLTA KONICA MINOLTA UK-211 *** CHINA 0,66 KG 0.66 492,34 View Importer
11/Sep/2017 8542323900 Dynamic random access memory (DRAM) without the encryption function (CRYPTOGRAPHY): MAP RAM for MFP BIZHUB 227/287/367 FOR 2 GB, of DDR3, the effective frequency of 1333 MHz, 1.5V SUPPLY VOLTAGE KONICA MINOLTA KONICA MINOLTA UK-211 *** CHINA 0,21 KG 0.21 124,26 View Importer
05/Sep/2017 8542323900 Dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL / memory chip (memory devices) are designed for storing digital information (programs, configuration parameters, data *** CHINA 0,02 KG 0.02 315 View Importer

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Our market research report and Russia export statistics of w d covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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