Check Russia import data of wat under HS code 8541290000. Get import data of Russia for HS code 8541290000
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
01/Nov/2017 | 8541290000 | Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | ON SEMICONDUCTOR, CHINA | *** | 35 | PC | 0.225 | 103,55 | View Importer |
27/Nov/2017 | 8541290000 | MOSFET: With NPN-crossing "VSKH56-16,115" COMMON dissipation of 1.3 W, collector-emitter voltage 80V; N-channel - "IPD50R3K0CEAUMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "FCPF | NEXPERIA | *** | 146200 | PC | 271.575 | 49518,91 | View Importer |
30/Nov/2017 | 8541290000 | Transistor module (IGBT / IGBT) N-TYPE STRUCTURE WITH BUILT-wheeling diode. Surge capacity of more than 1 watt. Designed for use in power converters, motor drives, in wind turbines and others. NOT SCRAP EL. | INFINEON | GERMANY | 14 | PC | 24.25 | 9443,28 | View Importer |
27/Sep/2017 | 8541290000 | POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V | INFINEON, COOLMOS | *** | *** | *** | 470.733 | 44806,92 | View Importer |
14/Sep/2017 | 8541290000 | FETs high electron mobility (HEMT), C dissipation of 20 W, 6 TSR. (NOT SCRAP ELECTRIC) APPLICATION: CONSTRUCTION electronic equipment for PCB mounting. With the dissipation of 6 watt POWER PAC | *** | MALAYSIA | 2,5 | KG | 2.5 | 45360 | View Importer |
14/Sep/2017 | 8541290000 | TRANSISTOR. MODEL "2N2907A" -4000 PCS. The product is a bipolar transistor wire PNP TYPE cylindrical body PCB. Power dissipation up to 1.8 watts. Voltage of 60 volts. NOT A phototransistor. : SUPPLIED SC | *** | CHINA | 1,43 | KG | 1.43 | 4696,95 | View Importer |
05/Sep/2017 | 8541290000 | TRANSISTOR. MODEL "IRF630NPBF" -112 PCS. The product is a field effect transistor with the maximum power DISPERSION to 82 watts and a voltage between the source-drain to 200 volts. Is designed in surface mount TO-220AB. : INTERN | *** | VIETNAM | 0,32 | KG | 0.32 | 113,23 | View Importer |
08/Sep/2017 | 8541290000 | TRANSISTORS dissipation of 1W or more: a field effect transistor 2SK3599-01MR: ST EMX512SC 37 watts for an analog mixing console YAMAHA CORPORATION YAMAHA YAMAHA WD844201 3 | *** | INDONESIA | 0,01 | KG | 0.01 | 3,65 | View Importer |
13/Sep/2017 | 8541290000 | Transistors, EXCEPT phototransistor is used as a component of other technical equipment and not intended for independent use: TRANSISTOR, voltage 300V, current 0,5A, power dissipation of 1 watt. They are used as SOS | *** | GERMANY | 36 | KG | 36 | 14569,26 | View Importer |
04/Sep/2017 | 8541290000 | TRANSISTOR is used in the pre-output stage of radio transmitting equipment for power amplification, power dissipation 83.3 watts does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: TIM5964- | *** | JAPAN | 0,27 | KG | 0.27 | 3447,52 | View Importer |
07/Sep/2017 | 8541290000 | Transistors, power dissipation of 520 watts use at the preset output stage of radio transmitting equipment for power amplification does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors 747-: IXTT | *** | TAIWAN CHINA | 0,59 | KG | 0.59 | 3417,97 | View Importer |
11/Sep/2017 | 8541290000 | Transistors, power dissipation 25 watts are used in the pre-output stage of radio transmitting equipment for power amplification does not apply to means of fire control, have no function encryption (CRYPTOGRAPHY), transistors: ULN2003 - | *** | CHINA | 8,83 | KG | 8.83 | 1657,4 | View Importer |
12/Sep/2017 | 8541290000 | SEMICONDUCTOR TRANSISTORS: SEMICONDUCTOR MODULE insulated-gate bipolar transistor, power dissipation is 60 watts, collector-emitter voltage of 600 V, 19 A CURRENT CODE OKP 3,417,810, INTENDED FOR USE IN pulse source PI | *** | THAILAND | 0,21 | KG | 0.21 | 225,01 | View Importer |
27/Sep/2017 | 8541290000 | POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V; "FCPF29 Silo | *** | UNITED STATES | 470,73 | KG | 470.73 | 44806,92 | View Importer |
27/Sep/2017 | 8541290000 | Other transistors; INSTALLED INSIDE INDUSTRIAL COMPUTER: TRANSISTOR 10 WATT, 2.2 AMP NXP NXP BLF1822-10 7 | *** | UNITED STATES | 0,25 | KG | 0.25 | 466,27 | View Importer |
Our market research report and Russia export statistics of wat covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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