Lookup Ukraine 100 fo imports under HS code 8541 from China. Search 100 fo import data under HS code 8541 from China.
China
| Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|
| 28/Apr/2017 | 8541600000 | 1.Krystaly collected piezoelectric (quartz, in the case of output), art. KLS14-HC-49S-10.000MHz - 1000pcs, art. L-KLS14-HC-49S-12.800-30-30-C - 1000pcs. For civil industrial electronics. Manufacturer - Ningbo KLS Imp & Exp Co., Ltd, trademark - KLS. . | CHINA | ***** | 1 | 121.9850379 | View Importer |
| 28/Apr/2017 | 8541100090 | 1.Diody Rectifier for civilian electronics industry: SMAJ15A-TR -10000sht.1.5KE33ARL -1900sht.Torhovelna Brand: STMicroelectronicsVyrobnyk: STMicroelectronics. | CHINA | ***** | 3.745 | 568.600144 | View Importer |
| 27/Apr/2017 | 8541290090 | 1.Tranzystory for civil electronics industry, with a capacity rozsiyuvannya1,3Vt: BCX56 -1000sht.Torhovelna Brand: LGEKrayina production: CNVyrobnyk: LGE. | CHINA | ***** | 0.3 | 40.57411077 | View Importer |
| 27/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (40W): art. IRFI740GPBF - 1000pcs. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 2.12 | 315.3047914 | View Importer |
| 26/Apr/2017 | 8541290090 | "1. transistors, phototransistors except: - BD238 - 100 pieces, bipolar, power dissipation of 25 watts, the collector current of 2 A, the collector-emitter voltage: 100 V.- BD912 - 200 pieces, bipolar, collector-emitter voltage 100V , current collector 15A.Potuzhnist scattering 90Vt. - MD1802FX - 50 pieces; Bipolar; Naprhuakolektor-emitter voltage: 700 V, current collector 10 A, the power dissipation of 50 watts. -STW13009 - 150 pieces; Bipolar. collector-emitter voltage 700V; current kolektora12A. Power dissipation: 125 watts. vyrobnytstvitelekomunikatsiynoho used in equipment for civil use. It is not a mustache tatkuvannyam abozahysnymy systems for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - CNTorhovelna mark - STMicroelectronicsVyrobnyk - STMicroelectronics. " | CHINA | ***** | 0.724 | 150.9284078 | View Importer |
| 26/Apr/2017 | 8541210090 | "1. Transistors, except phototransistors with a power dissipation of less than 1W: - BCY59IX - 2 pcs; Bipolar; Naprhua collector-emitter voltage: 45 V; Strumkolektora: 0.2 A; Power dissipation: 0.39 Vt.- BCY79IX - 1 pc; Bipolar; Naprhua collector-emitter voltage: -45 V, current collector, -100 mA Power dissipation: 0.34 W. used in vyrobnytstvitelekomunikatsiynoho equipment for civil use. It is not abozahysnymy systems equipment for use in potentially explosive environments. not his mistyatv consisting of transmitters and receivers or transmitters. not zasobomspetspryznachennya.Krayina production - CNTorhovelna mark - STMicroelectronicsVyrobnyk - STMicroelectronics. " | CHINA | ***** | 0.004 | 12.05700006 | View Importer |
| 26/Apr/2017 | 8541100090 | "1. diodes, except photodiodes and diodes svitlovypro minyuvalnyh: - 1N5347BRLG -12000 pieces, zener diode, Voltage: 10V; Power dissipation: 5W; current: 475 mA Resistance 2 Om.- 1N5359BRLG - 12000 pieces, zener diode, Voltage 24 V; Power dissipation: 5W; current: 500 mA, resistance 3.5 ohms. - MURS160T3G - 100 pieces; Rectifier diode: Naprhua600 V, 1 A. Sturm tour Working temperature --65 to + 175S. used inproduction telecommunications equipment, civilian purposes. No yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not contain in its composition and transmitters pryymachiv.Ne of transmitters and a means spetspryznachennya.Krayina production - CNTorhovelna mark - ON SemiconductorVyrobnyk - ON Semiconductor. " | CHINA | ***** | 3.614 | 778.3144622 | View Importer |
| 26/Apr/2017 | 8541401000 | "1. Light-emitting diodes: - HLX-P8D3WPWC - 1000 pcs; Voltage: 3 V; Current: 700 mA; Luminous flux: 180-230 lm; Power: 3 W. Used inproduction of telecommunication equipment for civilian use.Not equipment or protective systems For use in explosive environments.It does not contain transmitters or transmitters and receivers in its composition. It is not a means of special purpose. The production line is CNToriginal mark - Highlight Producer - Highlight. " | CHINA | ***** | 2 | 348.2283907 | View Importer |
| 26/Apr/2017 | 8541290090 | "1. Transistors, with the exception of phototransistors: - TIP142 - 100 pieces; Bipolar; Current 10A; Voltage: 100V; Power: 125 W. Used in the manufacture of telecommunication equipment for civilian use.It is not equipment orprotective systems for use in explosive atmospheres. Its component of transmitters or transmitters and receivers.This is not a special purpose tool. The production line is CNToriginal Brand - ON SemiconductorProducer - ON Semiconductor. " | CHINA | ***** | 0.66 | 34.02845137 | View Importer |
| 26/Apr/2017 | 8541409000 | "1. Devices semiconductor photosensitive, optocoupler: - CPC1008NTR - 100 pcs; Voltage: 1.2 V; Current: 150 mA; Impedance: 8 ohm; Scattering power: 150 mW. Used in the production of telecommunications equipment, civil assignment. Protective systems for use in explosive environments.It does not contain transmitters or transmitters and receivers in its composition.It is not a means of special purpose.Creation of production - CNTormal brand - IXYS Producer - IXYS. | CHINA | ***** | 0.05 | 45.68555404 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " | CHINA | ***** | 4.177 | 626.0785965 | View Importer |
| 26/Apr/2017 | 8541210090 | "1. Transistors, except phototransistors with a power dissipation of less than 1W: - 2N5551 - 1000 pieces; Bipolar; Naprhua collector-emitter voltage: 160V; Strumkolektora: 0.6 A; Power dissipation: 0,625 watts. Inproduction used telecommunications equipment, civil use . not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - Fairchild SemiconductorVyrobnyk - Fairchild Semiconductor. " | CHINA | ***** | 0.63 | 18.68553391 | View Importer |
| 26/Apr/2017 | 8541401000 | "1. The light emitting diodes: - OLYC.5m0020 - 1000 pieces; color: yellow; 1-4 mcd brightness, angle glow 100; wavelength: 588nm, current svitlodiodu20mA. Used in the manufacture of telecommunications equipment, tsyvilnohopryznachennya. It is no equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - KingBrightVyrobnyk - KingBright. " | CHINA | ***** | 0.5 | 22.54632727 | View Importer |
| 25/Apr/2017 | 8541401000 | 1. Light-emitting diodes, for use in civil electric devices: voltage 1.8V, current 100mA, art. TSUS5400 -1555pcs. Producer: VISHAY EUROPE.Category of production: CNTransporter: VISHAY. . | CHINA | ***** | 0.3 | 88.22661516 | View Importer |
| 25/Apr/2017 | 8541210090 | 1. Bipolar transistors, low power to 1W (NPN-type, 100mW): art. RN1117 - 3000 pcs. For civil electrical engineering. The manufacturer is Toshiba, the brand name is Toshiba. . | CHINA | ***** | 0.09 | 112.1288136 | View Importer |
Our market research report and Ukraine export statistics of 100 fo covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.
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