Lookup Ukraine 1000 imports under HS code 8541290010 from China. Search 1000 import data under HS code 8541290010 from China.
China
| Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|
| 27/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (40W): art. IRFI740GPBF - 1000pcs. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 2.12 | 315.3047914 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " | CHINA | ***** | 4.177 | 626.0785965 | View Importer |
| 25/Apr/2017 | 8541290010 | 1. Semiconductor devices: art. BSP297H6327XTSA1 transistor field-powerful 1000pcs. For use in elektrotehnytsi.Torhovelna mark - INF.Vyrobnyk - INF. . | CHINA | ***** | 0.52 | 159.0000816 | View Importer |
| 14/Apr/2017 | 8541290010 | 1.Napivprovidnykovi devices: SI2343CDS-T1-GE3CT-ND transistor field-powerful 1000shtKrayina production - CNTorhovelna mark - VISHAYVyrobnyk - VISHAY. | CHINA | ***** | 0.5 | 258.4769944 | View Importer |
| 12/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: - ZVN4525GTA - 1000 pieces, Field, ha tensions Power: 2.5 -10 V; typtranzystoru: N-channel. Operating temperature: -55 to +150 C. . inproduction used telecommunications equipment, civilian purposes. No yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - Diodes Inc / ZetexVyrobnyk - Diodes Inc / Zetex ". | CHINA | ***** | 0.365 | 278.5591541 | View Importer |
| 07/Apr/2017 | 8541290010 | 1.Tranzystor MOS structure, N-channel, I used to cue peretvorennyastru th in electrical circuits: art.IRLR3110ZPBF (maks.moschnost rozsiyuvannya140Vt, eg hectares 100V, current 63A) -1000sht.Vyrobnyk: Infineon Technologies.Krayina production: CN. Trademark: Infineon Technologies. | CHINA | ***** | 0.643 | 522.7885451 | View Importer |
| 05/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: - RFD14N05LSM - 1000 pieces; Field; eg ha drain-source: 50 V, drain current: 14A; Case: TO252AA. Used in the manufacture telekomunikatsiynohoobladnannya, civilian purposes. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - FAIRCHILD SEMICONDUCTORVyrobnyk - FAIRCHILD SEMICONDUCTOR. " | CHINA | ***** | 0.3 | 224.3276132 | View Importer |
| 03/Apr/2017 | 8541290010 | 1.Tranzystor MOS structure, N-channel, I used to cue peretvorennyastru th in electrical circuits: 1) art.STP5N95K3 (with power dissipation nya90Vt, voltage 950V and current 4A) -52sht 2) art.STP7NK80ZFP (with power dissipation of 30W , a voltage of 800V and current 5,2A) - 1000sht.Vyrobnyk: STMicroelectronics.Krayina production: CN.Torhivelna brand: STMicroelectronics. . | CHINA | ***** | 2.12 | 381.8398849 | View Importer |
Our market research report and Ukraine export statistics of 1000 covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.
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