cUkraine D W Imports under HS Code 8541290010 from China

Ukraine D W Imports under HS Code 8541290010 from China

Lookup Ukraine d w imports under HS code 8541290010 from China. Search d w import data under HS code 8541290010 from China.

Date HS Code Product Description Origin Country Quantity Net Weight [KGS] Total Value [USD] Importer Name
28/Apr/2017 8541290010 1. Semiconductor devices: STD17NF03LT4 field transistor with PN transition, N-channel -150sht.Torhovelna mark - STM.Vyrobnyk - STM. . CHINA ***** 0.004 26.92846979 View Importer
26/Apr/2017 8541290010 "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRFPE50PBF - 20 pieces; Field; drain-source voltage: 800 V, drain current: 7.8 A, Power: 190 Watts. Used in the manufacture telekomunikatsiynohoobladnannya, civil use. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - SemiconductorsVyrobnyk Vishay - Vishay Semiconductors. " CHINA ***** 0.13 13.82856425 View Importer
26/Apr/2017 8541290010 "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " CHINA ***** 4.177 626.0785965 View Importer
26/Apr/2017 8541290010 "1. Silicon Transistors Field powerful, n-channel, insulated gate: -TIRLR2905 - 50 pieces; Field; drain-source voltage of 16 V, drain current 42 A; Power dissipation of 110 watts. Vyrobnytstvitelekomunikatsiynoho used in equipment for civil use. It is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier. " CHINA ***** 0.042 14.79620328 View Importer
24/Apr/2017 8541290010 1. Ceramic rectangular glazed with ordinary (rough) ceramic for internal facing walls and floors, 042 YBA GRIS 19,5 * 84 m2220 CIAL --112,03 BERGEN LI 15 * 60 m2250 CIAL --12,6 BERGEN LI 15 * 60 m2279 CIAL --63 BERGEN AS 15 * 60 CIAL --50,4 m210R PADOVA NATURAL BG R 60 * 60 m2130 --1,44 COLETTE BEIGE 21,4 * 61 m2222 --75,45 FLAMANT Avet 19 5 * 84 m2212 --135,62 FLAMANT DEKO Avet 19.5 * 84 m2212 --67,81 FLAMANT DEKO GRIS 19,5 * 84 m2224 --67,81 FLAMANT GRIS 19.5 * 84 --33,41 m2223 FLAMANT GRIS 19,5 * 84 m2070 --67,81 MOSAICO COLETTE VISON 21,4 * 61 --75,45 m210R PADOVA NATURAL BG R 60 * 60 --64,8 m2Torhivelna mark - Vyrobnyk- ROCA ROCA SANITARIO, SAKrayina production ES. . CHINA ***** 0.12 9.991478627 View Importer
24/Apr/2017 8541290010 "1. Parts and accessories for agricultural tractors, parts of vulcanised rubber, unsteadily, nonporous, free of metal parts, not for the industrial assembly of MTZ: Rubber rings art. 17283181 - 1 pc., Rubber rings art. 87270125 - 31 pcs .; rubber rings art. 17283181 - 1 pc., rubber rings art. 86598101 - 100 pcs., Sealing rubber tube oil turbocharger art. 99434480 - 2 pcs., rubber rings art. 14461981 - 1 pc., rubber covers engine valves art. 500309014 - 20 pcs., rubber diaphragm valve spray sprayer art. BN325792 - 80 pcs., rubber seals Ref. 5133799 - 10 w .; t. " CHINA ***** 5 520.0001646 View Importer
18/Apr/2017 8541290010 "1. Field transistors are powerful silicon, n-channel, with an isolated gate: -APT38F80B2 - 3 pcs; Field; Voltage: 800 V; Strength: 41 A; Power: 1040 W. Used in the production of telecommunications equipment, civil assignment. Or protective systems for use in explosive environments.It does not contain transmitters or transmitters and receivers.It is not a means of special purpose.Crime production - CNTormal brand - Microsemi Corporation Producer - Microsemi Corporation. " CHINA ***** 0.013 21.71411087 View Importer
11/Apr/2017 8541290010 1.TRANZYSTORY POWERFUL FIELD silicon, N-channel, insulated gate, photocell NOT NOT Microwave: IRF3205S N channel POWER MOS transistors - 150 pieces. With power dissipation of 200 W, IRFR5305PBF ultra low, power MOS transistors - 150 pieces. With the power dissipation of 110 W, for civil INDUSTRY for use in control systems, elevators of residential buildings, NOT OR of electronic means emitting devices. CHINA ***** 0.4 133.7607308 View Importer
11/Apr/2017 8541290010 "1. Silicon Transistors Field powerful, n-channel, insulated gate: - IXFK64N50P - 6 units, Field, Voltage: 500 V Current: 64 A. Potuzhnistrozsiyuvannya: 830 watts. Used in the manufacture telekomunikatsiynohoobladnannya, civilian purposes. It is not equipment systemamydlya or protective use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - IXYSVyrobnyk - IXYS. " CHINA ***** 0.06 15.87517819 View Importer
10/Apr/2017 8541290010 "1. Silicon Transistors Field powerful, n-channel, insulated gate: - TIRF7313 - 60 pieces; Field; drain-source voltage of 30 V, drain current: 5,2 A; Power: 2 Vt.- TIRLB3813 - 50 pieces ; Field; voltage drain-source: 30 V, drain current: 190 a; Power: 230 watts. used in the manufacture of telecommunications equipment, civilian purposes. It is no equipment or protective systems dlyazastosuvannya in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovel Marc - International RectifierVyrobnyk - International Rectifier. " CHINA ***** 0.12 52.19471569 View Importer
04/Apr/2017 8541290010 "1. Silicon Transistors Field powerful, n-channel, insulated gate: - IRF7220TRPBF - 20 pcs, power, voltage drain-source: -12 V; -11A collector current, power dissipation: 2.5 W. Operating temperature -55 to + 175S.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is no equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - International RectifierVyrobny - International Rectifier. " CHINA ***** 0.01 3.95305928 View Importer
03/Apr/2017 8541290010 1.Tranzystor MOS structure, N-channel, I used to cue peretvorennyastru th in electrical circuits: 1) art.STP5N95K3 (with power dissipation nya90Vt, voltage 950V and current 4A) -52sht 2) art.STP7NK80ZFP (with power dissipation of 30W , a voltage of 800V and current 5,2A) - 1000sht.Vyrobnyk: STMicroelectronics.Krayina production: CN.Torhivelna brand: STMicroelectronics. . CHINA ***** 2.12 381.8398849 View Importer

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Our market research report and Ukraine export statistics of d w covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.

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