Lookup Ukraine electronic imports under HS code 8541290010 from China. Search electronic import data under HS code 8541290010 from China.
China
| Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|
| 27/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (40W): art. IRFI740GPBF - 1000pcs. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 2.12 | 315.3047914 | View Importer |
| 26/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 1.8Vt: art. BSP297H6327XTSA1 - 3pc. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.001 | 0.63420346 | View Importer |
| 25/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (2.1Vt): art. IRLL014NPBF - 720sht, powerful field transistors, MOS structure, N-channel, 1W, art. IRLL014NTRPBF - 2500sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.938 | 425.9199615 | View Importer |
| 21/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 1.8Vt: art. BSP297H6327XTSA1 - 297sht, powerful field transistors, MOS structure, N-channel, with scattering ability 1.3Vt: art. IRLML6346TRPBF - 100 pieces. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.083 | 68.48930067 | View Importer |
| 19/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 1.3Vt: art. IRLML6346TRPBF - 250sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.015 | 15.09147397 | View Importer |
| 18/Apr/2017 | 8541290010 | 1.Tranzystory strong field, N-channel power 200W scattering of: art. IRF3710PBF - 250sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.714 | 94.50001936 | View Importer |
| 13/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (1.3Vt): art. IRLML6344TRPBF - 300sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.018 | 21.06514848 | View Importer |
| 13/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with a scattering power 25W, Art. STF16N65M5 - 200sht. For civil industrial electronics. Manufacturer - STMicroelectronics NV, trademark - STM. . | CHINA | ***** | 0.552 | 232.6673072 | View Importer |
| 12/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 125Vt: art. FCP11N60 - 5pcs, powerful field transistors, MOS structure, N-channel, with scattering ability 36Vt: art. FCPF11N60 - 5pcs. For civil industrial electronics. Manufacturer - Fairchild Semiconductor, trademark - Fairchild Semiconductor. . | CHINA | ***** | 0.02 | 9.64572298 | View Importer |
| 12/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 1.3Vt: art. IRLML2030TRPBF - 84sht, powerful field transistors, MOS structure, N-channel, with scattering ability 143Vt: art. IRLR3636PBF - 60sht. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.024 | 35.96109659 | View Importer |
| 11/Apr/2017 | 8541290010 | 1.TRANZYSTORY POWERFUL FIELD silicon, N-channel, insulated gate, photocell NOT NOT Microwave: IRF3205S N channel POWER MOS transistors - 150 pieces. With power dissipation of 200 W, IRFR5305PBF ultra low, power MOS transistors - 150 pieces. With the power dissipation of 110 W, for civil INDUSTRY for use in control systems, elevators of residential buildings, NOT OR of electronic means emitting devices. | CHINA | ***** | 0.4 | 133.7607308 | View Importer |
| 07/Apr/2017 | 8541290010 | 1.Bipolyarnyy insulated gate transistor (IGBT) power 259Vt: art. STGW15H120DF2 - 120sht, powerful field transistors, MOS structure, N-channel, with scattering ability 3.3Vt: art. STN1NK60Z - 12000sht. For civil industrial electronics. Manufacturer - STMicroelectronics NV, trademark - STM. . | CHINA | ***** | 3.756 | 1565.175637 | View Importer |
| 04/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 1.09Vt: art. SI2308BDS-T1-E3 - 2 pcs. For civil industrial electronics. Manufacturer - Vishay Siliconix, trademark - Vishay. . | CHINA | ***** | 0.001 | 1.153761943 | View Importer |
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