Lookup Ukraine g g imports under HS code 8541 from China. Search g g import data under HS code 8541 from China.
China
| Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
|---|---|---|---|---|---|---|---|
| 28/Apr/2017 | 8541401000 | 1. Light Emitting Diode without laser. Is a separate structural elements that are semiconductor devices for use in further manufacture lighting general business purpose: HL-A-2835U36FC-S1-08-R LED COMPONENT, 2835 620-630nm Red 60mA - 4 thousand items, HL- LM002H384W-9B4C12 (Ra2) LED COMPONENT, COB 9W CRI> 80 Warm White CCT center 3000K Round Shape - 0,01 thousand items, HL-LM003H384W-17B8C12 (Ra2) LED COMPONENT, WW CCT 3000K CRI 80 - 0.01 thousand items, HL-LM003H384W-17B8C12 (Ra2) LED COMPONENT, NW CCT 4000K CRI 80 - 0.02 thousand items, HL-LM002H384W-9B4C12 (Ra2) LED COMPONENT, COB 9W CRI> 80 Natural White CCT center 4000K Round Shape - 0,01 thousand items, HL-LM003H384W-17B8C12 (Ra2) LED COMPONENT, WW CCT 3000K CRI 80 - 0.02 thousand items, HL-LM003H384W-17B8C12 (Ra2) LED COMPONENT, CW CCT 5000K CRI 80 - 0.02 thousand items, HL-LM003H384W-1 7B8C12 (Ra2) LED COMPONENT, CW CCT 6500K CRI 80 - 0.01 thousand items, HL-LM004H384W-40B18C12 (Ra4), WW CCT 3000K CRI 80 - 0.01 thousand items, HL-LM004H384W-40B18C12 ( Ra4) LED COMPONENT, NW CCT 4000K CRI 80 - 0.01 thousand items, HL-LM004H384W-40B18C12 (Ra4) LED COMPONENT, CW CCT 5000K CRI 80 - 0.01 thousand items, HL-A-2835U36FC- S1-08-R LED COMPONENT, 2835 620-630nm Red 60mA - 0,4 thousand items, HL-LM004H384W-40B18C12 (Ra4), WW CCT 3000K CRI 80 - 0,001 thousand items, HL-LM004H384W-40B18C12 ( Ra4) LED COMPONENT, NW CCT 4000K CRI 80 - 0,001 tys.sht.Torhivelna mark: HONGLIZHIHUI. Manufacturer: HONGLI ZHIHUI GROUP CO., LTDKrayina production: CN. | CHINA | ***** | 3.1 | 435.8563729 | View Importer |
| 28/Apr/2017 | 8541100090 | 1.Diody Rectifier for civilian electronics industry: BAS85-GS08 -5000sht.Torhovelna Brand: VishayVyrobnyk: Vishay. | CHINA | ***** | 0.28 | 69.9999356 | View Importer |
| 27/Apr/2017 | 8541210090 | "1.Tranzystory, power dissipation of 710mW: art.SI2302CDS-T1-GE3 -3000sht., Country of -CNTorhovelna mark -VishayVyrobnyk -Vishay Intertechnology, Inc.." | CHINA | ***** | 0.13 | 267.0000041 | View Importer |
| 27/Apr/2017 | 8541100090 | 1.Diody (except photodiodes and svitlovypromi nyuvalnyh) collected in the module: Used to supply starters avtotransportu. art. 130911, Diode (-), Diode (-) - 100sht. art. 130912, Diode (+), Diode (+) - 100sht.Torhivelna brand-HC CargoKrayina manufacturer-CNVyrobnyk: Holger Christiansen A / SA Bosch Group Company. . | CHINA | ***** | 1.2 | 108.1990905 | View Importer |
| 27/Apr/2017 | 8541100090 | 1.Diody: zener: art. TZMC5V1-GS08 - 50000sht. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 2.8 | 433.1476818 | View Importer |
| 27/Apr/2017 | 8541401000 | 1.Svitlovyprominyuvalni diodes for consumer and industrial electronic civil engineering (nelazerni): art. TSAL6100 - 12000sht. It is not illuminating and related equipment. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 4.128 | 574.0291541 | View Importer |
| 27/Apr/2017 | 8541100090 | "1. limiting diodes (suppressor), 15kV, 2A SP724AHTG-60sht. Used velektrotehnitsi.Torhovelna mark" "Littelfuse" ". Brand" "Littelfuse Europe GmbH" ". Country of-CN.." | CHINA | ***** | 0.01 | 21.97497931 | View Importer |
| 27/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (40W): art. IRFI740GPBF - 1000pcs. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 2.12 | 315.3047914 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -2SK3078 - 8 pieces; Polvoyy, Voltage: 10 V, current: 0.5 A; Power: 3 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. Not is the equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Toshiba SemiconductorVyrobnyk - Toshiba Semiconductor. " | CHINA | ***** | 0.001 | 3.257004625 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRFPE50PBF - 20 pieces; Field; drain-source voltage: 800 V, drain current: 7.8 A, Power: 190 Watts. Used in the manufacture telekomunikatsiynohoobladnannya, civil use. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - SemiconductorsVyrobnyk Vishay - Vishay Semiconductors. " | CHINA | ***** | 0.13 | 13.82856425 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " | CHINA | ***** | 4.177 | 626.0785965 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -FDS4935A - 100 pieces; Field; drain-source voltage of -30V, the drain current of 7A. Potuzhnistrozsiyuvannya 2W. Used in the manufacture of telecommunications equipment, civilian purposes. It is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Fairchild SemiconductorVyrobnyk - Fairchild Semiconductor. " | CHINA | ***** | 0.028 | 10.34288591 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -2SK2850 - 10 pieces; Polvoyy, Voltage: 900 V; current: 6 A, Power: 125 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - ElectricVyrobnyk Fuji - Fuji Electric. " | CHINA | ***** | 0.112 | 10.4855723 | View Importer |
| 26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -TIRLR2905 - 50 pieces; Field; drain-source voltage of 16 V, drain current 42 A; Power dissipation of 110 watts. Vyrobnytstvitelekomunikatsiynoho used in equipment for civil use. It is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier. " | CHINA | ***** | 0.042 | 14.79620328 | View Importer |
| 26/Apr/2017 | 8541401000 | "1. The light emitting diodes: - OLYC.5m0020 - 1000 pieces; color: yellow; 1-4 mcd brightness, angle glow 100; wavelength: 588nm, current svitlodiodu20mA. Used in the manufacture of telecommunications equipment, tsyvilnohopryznachennya. It is no equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - KingBrightVyrobnyk - KingBright. " | CHINA | ***** | 0.5 | 22.54632727 | View Importer |
Our market research report and Ukraine export statistics of g g covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.
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